Ultrafast Optical Switching in Three-Dimensional Photonic Crystals

Mazurenko, D. A.; Kerst, Robert; Dijkhuis, J. I.; Akimov, A. V.; Голубев, В. Г.; Kurdyukov, D. A.; Певцов, А. Б.; Sel’kin, A. V.

doi:10.1103/physrevlett.91.213903

Cited by 175 publications

(127 citation statements)

References 63 publications

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“…Similar inhomogeneity may also have played a role in interesting studies of silicon infiltrated opaline crystals, where reflectivity changes were observed near a Bragg peak at frequencies above the Si-band gap [90].…”

Section: Free Carrier Excitationmentioning

confidence: 99%

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Ultrafast optical switching of photonic crystals

Guina¹,

Suomalainen²,

Kalkman

et al. 2006

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

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Section: Free Carrier Excitationmentioning

confidence: 99%

“…Experiments in the first order stop gap region were carried out by Refs. [90] and [91], and switching experiments in the second order stop band region by Ref. [92].…”

Section: Free Carrier Excitationmentioning

confidence: 99%

Ultrafast optical switching of photonic crystals

Guina¹,

Suomalainen²,

Kalkman

et al. 2006

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

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“…[9] Similar inhomogeneity is probably also playing a role in recent studies of silicon infiltrated opaline crystals, where a disappearance of the Bragg peak was observed in the absorption range. [12] Therefore, the use of twophoton absorption was proposed as a way to increase the penetration depth of pump light into the sample and improve the switching homogeneity. [6] In this paper, we investigate the spatial homogeneity of optically generated free carrier plasmas in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors

Vos¹

2005

Journal of Applied Physics

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This paper discusses free carrier generation by pulsed laser fields as a mechanism to switch the optical properties of semiconductor photonic crystals and bulk semiconductors on an ultrafast time scale. Requirements are set for the switching magnitude, the time-scale, the induced absorption as well as the spatial homogeneity, in particular for silicon at λ = 1550 nm. Using a nonlinear absorption model, we calculate carrier depth profiles and define a homogeneity length ℓ hom . Homogeneity length contours are visualized in a plane spanned by the linear and two-photon absorption coefficients. Such a generalized homogeneity plot allows us to find optimum switching conditions at pump frequencies near ν/c=5000 cm −1 (λ = 2000 nm). We discuss the effect of scattering in photonic crystals on the homogeneity. We experimentally demonstrate a 10% refractive index switch in bulk silicon within 230 fs with a lateral homogeneity of more than 30 µm. Our results are relevant for switching of modulators in absence of photonic crystals.

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“…[12][13][14] It has been found that the number of bound states within the waveguides depended on the width and well depth and the Hetero-structure have been used to develop devices such as resonant cavities 15 , waveguides 16 and filters 17 . Meanwhile nonlinear nanophotonic coupling waveguides induced by laser or stress field have also been investigated both theoretically [18][19][20] and experimentally [21][22] . Nonlinear photonic waveguides are formed by embedding Kerr-nonlinear photonic crystals in a linear photonic crystal.…”

Section: Introductionmentioning

confidence: 99%

Resonant splitting in periodic T-shaped photonic waveguides

Wang

Yang

Xie

et al. 2012

Journal of Applied Physics

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Abstract:Resonant splitting phenomena of photons in periodic T-shaped waveguide structure are investigated by the Green's function method. An interesting resonant phenomenon is found in the transmission spectra. When the T-shaped structure contains n constrictions, there are (n-1)-fold resonant splitting peaks in the low frequency region. The peaks are induced by low quasi-bound states in which photons are intensively localized in the stubs. While (n-2)-fold resonant splitting occurs in the high frequency region. These peaks are induced by the high quasi-bound states where the photons are mainly localized in constrictions rather than in stubs. To this kind of quasi-bound state, the stub acts as a potential barrier rather than a well, which is the inverse of the case of the low quasi-bound states corresponding to the (n-1)-fold splitting peaks. These resonant peaks can be modulated by adjusting the periodic number and geometry of the waveguide structures. The results can be used to develop optical switching devices, tunable filters, and coupled waveguides.

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Ultrafast Optical Switching in Three-Dimensional Photonic Crystals

Cited by 175 publications

References 63 publications

Ultrafast optical switching of photonic crystals

Ultrafast optical switching of photonic crystals

Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors

Resonant splitting in periodic T-shaped photonic waveguides

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