2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference 2006
DOI: 10.1109/cleo.2006.4629083
|View full text |Cite
|
Sign up to set email alerts
|

Ultrafast optical switching of photonic crystals

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

3
31
0

Year Published

2007
2007
2020
2020

Publication Types

Select...
4
1

Relationship

1
4

Authors

Journals

citations
Cited by 10 publications
(34 citation statements)
references
References 116 publications
(166 reference statements)
3
31
0
Order By: Relevance
“…The main mechanism in use for modifying the optical properties of solids is the excitation of free charge-carriers (FCs) [9][10][11][12][13][14][15]. FC excitation is frequently accomplished electrically, e.g., by an injection or a depletion of carriers with a bias voltage.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…The main mechanism in use for modifying the optical properties of solids is the excitation of free charge-carriers (FCs) [9][10][11][12][13][14][15]. FC excitation is frequently accomplished electrically, e.g., by an injection or a depletion of carriers with a bias voltage.…”
Section: Introductionmentioning
confidence: 99%
“…This plasma has a Drude-like contribution to the dielectric constant of the semiconductor, resulting in a refractive index that is lowered proportionally to the pump intensity (i.e., it is a nonlinear effect), reaching values as high as ∆n/n ∼ 10 −1 [13,15]. However, while the decrease of the refractive index occurs at time scales ranging from a few tens of femtoseconds (e.g., in silicon) to several picoseconds (e.g., in GaAs) [15], the refractive index relaxes to its equilibrium value at much longer time scales, depending on the dominant material relaxation mechanisms. These range from no less than several tens of picoseconds to a few nano-seconds [16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…While this result is expected for micron-scale periods (weak diffusion), it is quite un-intuitive for sub-micron periods. It originates from the relatively long thermalization times (e.g., with respect to silicon) [48]. This also means, for example, that heat diffusion will be less important in a semiconductor such as GaAs for which the thermalization is even slower [48].…”
Section: Discussionmentioning
confidence: 99%
“…[3] we infer a large refractive index change of about ∆n'/n' = 2 %. The deduced refractive index change is predicted to strongly modify the density of states inside the crystal [15]. In experiments on the red part of the spectrum (ω probe < 6250 cm -1 ), the pump frequency was chosen to be (ω pump = 6450 cm -1 ).…”
Section: Ultrafast Switching Of Si Inverse Opalsmentioning
confidence: 99%