Ultrafast nonlinear dynamics in silicon nanocrystal-based horizontal slot waveguides

Matres, J.; Martı́nez, Alejandro; Martí, J.; Otón, Claudio J.; Colonna, J. P.; Ratin, C.; Fédéli, Jean Marc

doi:10.1109/group4.2011.6053705

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2017

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“…If one managed to reduce the recombination time of carriers from 1 ns to tens of ps, the effect would be ideal for switching. In samples fabricated through ePIXfab platform, this time was around 10 ns, while we also reported Silicon strip waveguides with recombination times in the order of 100 ps fabricated in our facilities [36,37]. The recombination time of free carriers depends on several factors, such as dopant concentration or waveguide geometry.…”

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confidence: 99%

Ultrafast, CMOS compatible, integrated all optical switching

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Section: Free Carrier Effectsmentioning

confidence: 99%

Ultrafast, CMOS compatible, integrated all optical switching

Abril¹

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Si-rich Silicon Nitride for Nonlinear Signal Processing Applications

Lacava

Stanković

Khokhar

et al. 2017

Sci Rep

122

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Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm−1). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.

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Ultrafast nonlinear dynamics in silicon nanocrystal-based horizontal slot waveguides

Cited by 2 publications

References 11 publications

Ultrafast, CMOS compatible, integrated all optical switching

Ultrafast, CMOS compatible, integrated all optical switching

Si-rich Silicon Nitride for Nonlinear Signal Processing Applications

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