1992
DOI: 10.1063/1.108200
|View full text |Cite
|
Sign up to set email alerts
|

Ultrafast all-optical switching in semiconductor nonlinear directional couplers at half the band gap

Abstract: We demonstrate ultrafast, high throughput, all-optical switching in optimized, 2-cm-long, halfand full-beat-length nonlinear directional couplers operated at 1.55 pm, below half the band gap of Ga, s2Ala1sAs. The long device length allowed the elimination of nonlinear loss and resulted in a switching peak power and energy of 85 W and 65 pJ, respectively.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
39
0
1

Year Published

2000
2000
2016
2016

Publication Types

Select...
6
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 135 publications
(40 citation statements)
references
References 8 publications
0
39
0
1
Order By: Relevance
“…It is well-known that semiconductors have favorable properties for optical switching , hence they are excellent constituents for switchable photonic materials [121,122]. Moreover, their elevated refractive indices are highly advantageous to photonic crystals per se [22,25,33,34,105,123].…”
Section: Introductionmentioning
confidence: 99%
“…It is well-known that semiconductors have favorable properties for optical switching , hence they are excellent constituents for switchable photonic materials [121,122]. Moreover, their elevated refractive indices are highly advantageous to photonic crystals per se [22,25,33,34,105,123].…”
Section: Introductionmentioning
confidence: 99%
“…The implementation of such devices requires materials with low linear and nonlinear losses, high Kerr-type refractive nonlinearities and response times of a few picoseconds or less [11]. To search for materials which meet the above requirements, it has been suggested to target at semiconductors with their band gap at least twice the photon energy used (E g > 2 E photon ) avoiding optical absorption due to one-or two-photon transitions [12][13][14]. In this regard, wide-gap semiconductors are a suitable candidate; and ZnSe has been recently reported to be one of the promising candidates [15].…”
Section: Introductionmentioning
confidence: 99%
“…However, the concept of directional couplers is also ideally suited to a planar geometry, which allows for the fabrication of couplers with tailored properties in various materials. Examples include broadband operation in a larger wavelength range for optical communications, fast electrical switching, polarization and mode-selective coupling, and intensity-dependent couplers that make use of nonlinear substrate material properties [5][6][7][8]. Besides semiconductors like silicon and III/V compounds, lithium niobate (LiNbO 3 ) is considered one of the most promising materials for integrated optical devices.…”
Section: Introductionmentioning
confidence: 99%
“…For this purpose, directional couplers may be used, which rely on the extension of the evanescent electric field outside the guiding core region [1][2][3][4][5][6][7][8]. If the evanescent fields of two waveguides that are close enough to each other overlap, light power can be coupled between the two interacting modes.…”
Section: Introductionmentioning
confidence: 99%