Ultra-thin-film AlN contour-mode resonators for sensing applications

Rinaldi, Matteo; Zuniga, C.; Piazza, Gianluca

doi:10.1109/ultsym.2009.5441939

Cited by 21 publications

(16 citation statements)

References 10 publications

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“…For small magnetic field sensing (0 -10 Oe), the measured resonance frequency sensitivity to DC magnetic field is approximately 1 Hz/nT. The transient response of the device was measured by exciting the sensor at a single frequency, f c , and monitoring the variation over time of the device admittance amplitude [8]. The excitation frequency, f c = 215.9 MHz, was set between the series and parallel resonances, where the slope of admittance amplitude curve versus frequency is maximum [8].…”

Section: Figure 5: Measured Admittance and Bvd Model Fitting Of The Fmentioning

confidence: 99%

“…The transient response of the device was measured by exciting the sensor at a single frequency, f c , and monitoring the variation over time of the device admittance amplitude [8]. The excitation frequency, f c = 215.9 MHz, was set between the series and parallel resonances, where the slope of admittance amplitude curve versus frequency is maximum [8]. The measured transient response of the sensor under low frequency (0.1 Hz and 1 Hz) square wave magnetic field applied is shown in Figure 8.…”

Section: Figure 5: Measured Admittance and Bvd Model Fitting Of The Fmentioning

confidence: 99%

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MEMS resonant magnetic field sensor based on an AlN/F<inf>e</inf>G<inf>a</inf>B bilayer nano-plate resonator

Huang

Nan

Sun

et al. 2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient k t 2 ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.

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Section: Figure 5: Measured Admittance and Bvd Model Fitting Of The Fmentioning

confidence: 99%

Section: Figure 5: Measured Admittance and Bvd Model Fitting Of The Fmentioning

confidence: 99%

MEMS resonant magnetic field sensor based on an AlN/F<inf>e</inf>G<inf>a</inf>B bilayer nano-plate resonator

Huang

Nan

Sun

et al. 2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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“…(2) [5,6]. (2) It is worth nothing that the resonance frequency, f 0 , and the thickness, T, of the CMR-S are two independent variables while for FBARs and QCMs they are intrinsically coupled and cannot be set independently from one another.…”

Section: Nanoscaled Cmr-s Designmentioning

confidence: 99%

“…These issues have been recently overcome by AlN Contour-Mode Resonant Sensors (CMR-S) [4,5,6]. In fact, this technology enables the fabrication of ultra-sensitive nanoscaled devices that can be piezoelectrically actuated and sensed directly on chip [5].…”

Section: Introductionmentioning

confidence: 99%

SS-DNA functionalized ultra-thin-film ALN Contour-mode Resonators with self-sustained oscillator for volatile organic chemical detection

Rinaldi

Duick

Zuniga

et al. 2010

2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper reports on the design and experimental verification of a new class of nanoscale gravimetric sensors based on ultra-thin-film AlN Contour-Mode Resonant Sensor (CMR-S) functionalized with ss-DNA and connected to a chip-based self-sustaining oscillator loop (fabricated in the ON Semiconductor 0.5 μm CMOS process) for direct frequency read-out. The 220 MHz oscillator based on the ultra-thin AlN CMR-S exhibits an Allan Variance of ∼20 Hz for 100 ms gate time. The sensor affinity for the adsorption of volatile organic chemicals such as 2,6 dinitroluene (DNT, a simulant for explosive vapors) is enhanced by functionalizing the top gold electrode of the device with a thiol-terminated single stranded DNA sequence (Thiol -5' CTT CTG TCT TGA TGT TTG TCA AAC 3') enabling the detection of concentrations as low as 1.5 part per billion (ppb). Disciplines Electrical and Electronics CommentsSuggested Citation: Matteo Rinaldi, Brandon Duick, Chiara Zuniga, Chengjie Zuo, and Gianluca Piazza.

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“…It is therefore essential that this parameter is monitored when scaling the device into the nano realm. The need for a high and constant k t 2 -Q justifies the use of AlN piezoelectric films for the transduction of the resonator, which have shown to maintain high Q and high coupling even when the film thickness is scaled to sub-micron dimensions [28]. This is another advantage of the AlN CMR-S technology over other solutions based on electrostatically-transduced devices [10], whose coupling generally degrades with the frequency of operation.…”

Section: Aln Cmr-s Oscillator Designmentioning

confidence: 99%

Nanoscaled piezoelectric aluminum nitride contour-mode resonant sensors

2010

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This paper reports on a new class of nanoscaled piezoelectric aluminum nitride contour-mode resonant sensors (CMR-S) that have been developed for the gravimetric detection of volatile organic chemicals (VOC). The use of the CMR-S and its scaling for the making of large arrays of detectors is justified in terms of the superior sensitivity and limit of detection (LOD ~ zg/μm 2 ) that this technology attains with respect to any other available acoustic device. The choice of a novel functionalization layer based on ss-DNA is introduced as an effective way to selectively detect multiple VOCs without altering the electromechanical characteristics of the resonator. Experimental results confirming the advantages of scaling the device dimensions and its frequency of operation in terms of improved LOD and measurement speed are presented. Furthermore, preliminary data showing selective detection of dymethyl-methylphosphonate (DMMP) and dinitroluene (DNT) (with LOD in the order of ppt) are reported. Disciplines Electrical and Computer Engineering | Engineering CommentsSuggested Citation: Piazza, Gianluca; Rinaldi, Matteo; Zuniga, Chiara; , "Nanoscaled piezoelectric aluminum nitride contourmode resonant sensors," Sensors, 2010 IEEE , vol., no., pp.2202-2207, 1-4 Nov. 2010. ©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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Ultra-thin-film AlN contour-mode resonators for sensing applications

Cited by 21 publications

References 10 publications

MEMS resonant magnetic field sensor based on an AlN/F<inf>e</inf>G<inf>a</inf>B bilayer nano-plate resonator

MEMS resonant magnetic field sensor based on an AlN/F<inf>e</inf>G<inf>a</inf>B bilayer nano-plate resonator

SS-DNA functionalized ultra-thin-film ALN Contour-mode Resonators with self-sustained oscillator for volatile organic chemical detection

Nanoscaled piezoelectric aluminum nitride contour-mode resonant sensors

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