State-of-the-art compact antennas rely on electromagnetic wave resonance, which leads to antenna sizes that are comparable to the electromagnetic wavelength. As a result, antennas typically have a size greater than one-tenth of the wavelength, and further miniaturization of antennas has been an open challenge for decades. Here we report on acoustically actuated nanomechanical magnetoelectric (ME) antennas with a suspended ferromagnetic/piezoelectric thin-film heterostructure. These ME antennas receive and transmit electromagnetic waves through the ME effect at their acoustic resonance frequencies. The bulk acoustic waves in ME antennas stimulate magnetization oscillations of the ferromagnetic thin film, which results in the radiation of electromagnetic waves. Vice versa, these antennas sense the magnetic fields of electromagnetic waves, giving a piezoelectric voltage output. The ME antennas (with sizes as small as one-thousandth of a wavelength) demonstrates 1–2 orders of magnitude miniaturization over state-of-the-art compact antennas without performance degradation. These ME antennas have potential implications for portable wireless communication systems.

High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields.

Ultrathin plasmonic metasurfaces have proven their ability to control and manipulate light at unprecedented levels, leading to exciting optical functionalities and applications. Although to date metasurfaces have mainly been investigated from an electromagnetic perspective, their ultrathin nature may also provide novel and useful mechanical properties. Here we propose a thin piezoelectric plasmonic metasurface forming the resonant body of a nanomechanical resonator with simultaneously tailored optical and electromechanical properties. We experimentally demonstrate that it is possible to achieve high thermomechanical coupling between electromagnetic and mechanical resonances in a single ultrathin piezoelectric nanoplate. The combination of nanoplasmonic and piezoelectric resonances allows the proposed device to selectively detect long-wavelength infrared radiation with unprecedented electromechanical performance and thermal capabilities. These attributes lead to the demonstration of a fast, high-resolution, uncooled infrared detector with ∼80% absorption for an optimized spectral bandwidth centered around 8.8 μm.

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhighfrequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.This journal article is available at ScholarlyCommons: http://repository.upenn.edu/ese_papers/522 0885-3010/$25.00 © 2010 IEEE 38 IEEE TransacTIons on UlTrasonIcs, FErroElEcTrIcs, and FrEqUEncy conTrol, vol. 57, no. 1, JanUary 2010Abstract-This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh-frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, k t 2 , in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.

State-of-the-art sensors use active electronics to detect and discriminate light, sound, vibration and other signals. They consume power constantly, even when there is no relevant data to be detected, which limits their lifetime and results in high costs of deployment and maintenance for unattended sensor networks. Here we propose a device concept that fundamentally breaks this paradigm-the sensors remain dormant with near-zero power consumption until awakened by a specific physical signature associated with an event of interest. In particular, we demonstrate infrared digitizing sensors that consist of plasmonically enhanced micromechanical photoswitches (PMPs) that selectively harvest the impinging electromagnetic energy in design-defined spectral bands of interest, and use it to create mechanically a conducting channel between two electrical contacts, without the need for any additional power source. Our zero-power digitizing sensor prototypes produce a digitized output bit (that is, a large and sharp off-to-on state transition with an on/off conductance ratio >10 and subthreshold slope >9 dec nW) when exposed to infrared radiation in a specific narrow spectral band (∼900 nm bandwidth in the mid-infrared) with the intensity above a power threshold of only ∼500 nW, which is not achievable with any existing photoswitch technologies.

We report a highly sensitive NEMS DC/low frequency magnetic field sensor consisting of an AlN/ FeGaB resonator, with a DE effect-based sensing principle. Unlike previously reported magnetic field detection schemes, such as observing induced magnetoelectric voltage, or monitoring impedance, we designed a system to directly measure the reflected output voltage from the sensor as a function of magnetic field. The AlN/FeGaB resonator shows a resonance frequency shift of 3.19 MHz (1.44%), which leads to a high DC magnetic field sensitivity of 2.8 Hz/nT and a limit of detection of 800pT in an unshielded, room temperature and pressure, lab environment.

Metamaterial perfect absorbers (MPAs) are artificial materials composed of an array of subwavelength structures that manipulate electromagnetic waves to achieve extraordinary light absorption properties. Driven by the advent of the Internet of Things, MPAs are employed in microelectromechanical systems for the development of efficient and miniaturized IR detectors, imagers, and spectrometers, thanks to their lithographically tunable peak absorption, spectral selectivity, and ultrathin thickness. MPAs characterized by high absorptance in narrow spectral bands are particularly desirable for the implementation of high‐resolution IR spectroscopic sensors. Yet, no accurate analytical model is currently available to guide the design of an MPA with ultra‐narrow absorption bandwidth, while meeting all the stringent requirements for spectroscopic sensors. Here, a circuit model capable of accurately predicting spectral responses of metal–insulator–metal (MIM) IR absorbers is reported. The model is experimentally validated in the mid‐wavelength IR spectral range and exploited for the first demonstration of an MIM IR absorber that exhibits performance approaching the predicted physical limits: full‐width at half‐maximum ≈3% and near‐unity absorption (η > 99.7%) at 5.83 µm wavelength, while independent of incident angle and polarization of the impinging IR radiation. These unprecedented absorption properties are key enablers for the development of miniaturized, low‐cost, and high‐resolution spectrometers.

This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.This conference paper is available at ScholarlyCommons: http://repository.upenn.edu/ese_papers/493