Ultra-thin ALD-MnN barrier for low resistance advanced interconnect technology

Yang, Shao-Ming; Lee, Ming-Han; Yeh, Ching-Fu; Fu, Shih-Kang; Chan, Yu-Chen; Shue, S.L.; Cao, Min

doi:10.1109/iitc-amc.2017.7968973

Cited by 4 publications

(2 citation statements)

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“…Additionally, there is overwhelmingly more literature on the topic of diffusion barriers than there is for liner materials, and there are few studies that examine a barrier and a liner material together, or test a material for both barrier and liner properties. Some of the materials studied as combined barrier/liner materials include NiP alloy [10], Cr [11], RuMo alloy [12], CoWB [13], Ru [14], MoC doped Ru [15], Ru(P) [16], RuCo [17], Co [18,19], Co(W) [20][21][22][23], MnN [24] and Ti [25]. There is also some precedence for building upon existing knowledge by combining known diffusion barrier and liner materials.…”

Section: Introductionmentioning

confidence: 99%

Incorporation of tungsten or cobalt into TaN barrier layers controls morphology of deposited copper

Nies¹,

Nolan²

2023

J. Phys. Mater.

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Progress in semiconductor devices, which has enabled the information and communications technology explosion of the 21st century, has been driven by Moore’s Law and the accompanying aggressive scaling of transistors. However, it is now acknowledged that the currently used copper interconnects are becoming a bottleneck in sub-nm scaling. Semiconductor devices require a diffusion barrier and a seed layer in the volume available to the interconnect metal. This then limits the minimum size of the interconnect and copper suffers from a preference to form 3D islands which are non-conducting rather than conducting films. Therefore there is a pressing need to either replace copper, which has its own difficulties, or to reduce the volume taken up by the diffusion barrier and liner; ideally finding a single material displaying both properties is needed. We have previously shown that incorporation of Ru into the surface layer of TaN is a strong alternative to the usual TaN/Ta or TaN/Ru stacks. In this work we study other possible metals that can be incorporated into TaN, namely Co and W, which are less expensive and critical than Ru and can potentially outperform it. Our first principles density functional theory (DFT) results from static relaxations and ab initio Molecular Dynamics (aiMD) show that there are several compositions of both Co- and W-doped TaN which should promote growth of 2D copper interconnects without compromising the barrier properties of TaN. With this selection of materials it should be possible to design new experimental processes that promote downscaled copper interconnects for the next generation of electronic devices. Additionally, our work presents an improved method towards prediction of thin film morphology on a given substrate, which can be of use for a variety of materials science applications.

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Section: Introductionmentioning

confidence: 99%

Incorporation of tungsten or cobalt into TaN barrier layers controls morphology of deposited copper

Nies¹,

Nolan²

2023

J. Phys. Mater.

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“…According to the International Roadmap for Devices and Systems (IRDS), the interconnect metal pitch will be less than 20 nm by 2028 (Figure a). Scaling the interconnect metal pitch increases surface scattering and grain boundary scattering, resulting in increased interconnect resistance and thus increased logic circuit power consumption. − In the technology field, the progression from the Al process to the Cu process , and now the current ultra-thin liner − have required the need to increase the area of the Cu interconnect to reduce the resistance value or to use metals with small mean free paths such as Co and Ru to solve the scattering problem. − Recently, several studies have proposed the use of multilayer graphene as an interconnected material. It was found that multilayer graphene exhibits excellent properties after doping.…”

Section: Introductionmentioning

confidence: 99%

Intercalated Multilayer Graphene with Ultra Low Resistance for Next-Generation Interconnects

Huang

Chang

Tsao

et al. 2023

ACS Appl. Nano Mater.

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In recent years, many reports have demonstrated the high potential for multilayer graphene in semiconductor fabrication. As interconnects within semiconductors or electrodes for two-dimensional transistors, the preparation of large-area multilayer graphene is becoming increasingly important. Herein, we report a method for growing large-area multilayer graphene, which can achieve rapid heating and cooling. With the use of a high carbon concentration source, the preparation of multilayer graphene can be completed in a few seconds. This manufacturing method has the advantage of producing graphene with high quality, uniformity, and electrical conductivity. In commercial applications, this technology has great potential for the mass production and rapid fabrication of multilayer graphene. In addition, we found that the multilayer graphene produced by this method had cobalt atoms doped into the multilayer graphene during the process, resulting in its low resistivity. Combined with our intercalation technology, intercalated FeCl 3 in the graphene interlayer can reduce the resistivity of graphene to 3.55 μΩ cm, which is very close to the resistivity of copper bulk. This result makes multilayer graphene more promising for various applications.

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System scaling for intelligent ubiquitous computing

Sun

2017

2017 IEEE International Electron Devices Meeting (IEDM)

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Ultra-thin ALD-MnN barrier for low resistance advanced interconnect technology

Cited by 4 publications

References 4 publications

Incorporation of tungsten or cobalt into TaN barrier layers controls morphology of deposited copper

Incorporation of tungsten or cobalt into TaN barrier layers controls morphology of deposited copper

Intercalated Multilayer Graphene with Ultra Low Resistance for Next-Generation Interconnects

System scaling for intelligent ubiquitous computing

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