Intercalated Multilayer Graphene with Ultra Low Resistance for Next-Generation Interconnects

Abstract

In recent years, many reports have demonstrated the high potential for multilayer graphene in semiconductor fabrication. As interconnects within semiconductors or electrodes for two-dimensional transistors, the preparation of large-area multilayer graphene is becoming increasingly important. Herein, we report a method for growing large-area multilayer graphene, which can achieve rapid heating and cooling. With the use of a high carbon concentration source, the preparation of multilayer graphene can be completed in a few seconds. This manufacturing method has the advantage of producing graphene with high quality, uniformity, and electrical conductivity. In commercial applications, this technology has great potential for the mass production and rapid fabrication of multilayer graphene. In addition, we found that the multilayer graphene produced by this method had cobalt atoms doped into the multilayer graphene during the process, resulting in its low resistivity. Combined with our intercalation technology, intercalated FeCl 3 in the graphene interlayer can reduce the resistivity of graphene to 3.55 μΩ cm, which is very close to the resistivity of copper bulk. This result makes multilayer graphene more promising for various applications.