Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion

Hou, Ruixiang; Li, Lei; Fang, Xin; Zhao, Hui; Chen, Yihang; Xie, Ziang; Sun, Guoxiang; Zhang, Xinhe; Zhao, Yanfei; Huang, Rong; Huang, Zhiwen; He, Youqin; Ma, Ning; Zhang, Jicai; Xu, Wanjing; Yang, Jinbo; Xiao, Changyan; Qin, G. G.

doi:10.1007/s11665-018-3782-z

Cited by 5 publications

(7 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This work made an in-depth study on the transport of B, Al and Ag ions in a plasma-Si system. It is considered that the plasma-stimulated ion transport could be well described by an implantation-diffusion twostep process rather than a pure diffusion process reported previously [1][2][3][4][5]. The first step is the impurity ion implantation under the sheath voltage induced by plasma.…”

Section: Introductionmentioning

confidence: 95%

“…Several works of Qin research group reported a series of intriguing experiments, which revolve around the plasma-stimulated impurity ion transport in multiple types of semiconductors (Si, GaAs, GaN and SiC) [1][2][3][4][5]. Secondary ion mass spectroscopy (SIMS) results reveal that the transport distances for the majority of reported impurities are up to tens of nanometers within several-minute plasma treatment.…”

Section: Introductionmentioning

confidence: 99%

“…Secondary ion mass spectroscopy (SIMS) results reveal that the transport distances for the majority of reported impurities are up to tens of nanometers within several-minute plasma treatment. The earliest works simply interpreted this impurity ion transport as a pure plasma-stimulated ion diffusion process, ignoring the characteristic impurity ion concentration peak near the surface [1][2][3][4]. Not until very recently did Li et al notice the effect of ion implantation process induced by plasma sheath voltage, which may account for this characteristic peak [3].…”

Section: Introductionmentioning

confidence: 99%

“…The earliest works simply interpreted this impurity ion transport as a pure plasma-stimulated ion diffusion process, ignoring the characteristic impurity ion concentration peak near the surface [1][2][3][4]. Not until very recently did Li et al notice the effect of ion implantation process induced by plasma sheath voltage, which may account for this characteristic peak [3]. However, there is still a lack of detailed and quantitative studies on the plasma-stimulated ion transport.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Plasma-stimulated great reduction of diffusion activation energies for B, Al, and Ag in Si

Zhang

et al. 2023

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

This work made an in-depth study on the transport of B, Al and Ag ions in an inductively coupled plasma-Si system. The plasma-stimulated impurity ion transport is demonstrated to be described by an implantation-diffusion two-step process rather than a pure diffusion process reported previously. The first step is impurity ion implantation under sheath voltage induced by plasma, which determines the impurity ion quantity into Si. The second step is plasma-stimulated impurity ion diffusion, which determines impurity ion transport depth in Si. An approximate solution to this implantation-diffusion process is deduced. Plasma-stimulated diffusion coefficients (D) for B, Al and Ag ions in Si are obtained by fitting the measured secondary ion mass spectroscopy concentration profiles with this equation. Furthermore, plasma-stimulated diffusion activation energies for B, Al and Ag ions in p-Si at 0-120 ºC are determined to be 0.22, 0.36 and 0.18 eV by Arrhenius plots, which are much lower than diffusion activation energies of 0.4-0.7, 1.2 and 1.15 eV for interstitial B, Al and Ag ions in Si without plasma reported in literatures. The great reduction of diffusion activation energy makes it possible for impurities to diffuse at room temperature or lower temperatures. The view of plasma-stimulated impurity ion transport is of significant importance on semiconductor technology and device degradation research.

show abstract

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Plasma-stimulated great reduction of diffusion activation energies for B, Al, and Ag in Si

Zhang

et al. 2023

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Laser doping [22], electro-erosive alloying [23] and plasma doping [24] are also common. Laser surface hardening realized by highly concentrated radiation is focused on a small area (fractions in a range of 1-10 mm) [25].…”

Section: Introductionmentioning

confidence: 99%

Impact of Magnetic-Pulse and Chemical-Thermal Treatment on Alloyed Steels’ Surface Layer

et al. 2022

View full text Add to dashboard Cite

The relevant problem is searching for up-to-date methods to improve tools and machine parts’ performance due to the hardening of surface layers. This article shows that, after the magnetic-pulse treatment of bearing steel Cr15, its surface microhardness was increased by 40–50% compared to baseline. In this case, the depth of the hardened layer was 0.08–0.1 mm. The magnetic-pulse processing of hard alloys reduces the coefficient of microhardness variation from 0.13 to 0.06. A decrease in the coefficient of variation of wear resistance from 0.48 to 0.27 indicates the increased stability of physical and mechanical properties. The nitriding of alloy steels was accelerated 10-fold that of traditional gas upon receipt of the hardened layer depth of 0.3–0.5 mm. As a result, the surface hardness was increased to 12.7 GPa. Boriding in the nano-dispersed powder was accelerated 2–3-fold compared to existing technologies while ensuring surface hardness up to 21–23 GPa with a boride layer thickness of up to 0.073 mm. Experimental data showed that the cutting tool equipped with inserts from WC92Co8 and WC79TiC15 has a resistance relative to the untreated WC92Co8 higher by 183% and WC85TiC6Co9—than 200%. Depending on alloy steel, nitriding allowed us to raise wear resistance by 120–177%, boriding—by 180–340%, and magneto-pulse treatment—by more than 183–200%.

show abstract

Capacitively coupled plasma-stimulated room-temperature Mg and Mn doping and electrical activation in GaAs

Zang

et al. 2019

Appl. Phys. A

View full text Add to dashboard Cite

Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion

Cited by 5 publications

References 25 publications

Plasma-stimulated great reduction of diffusion activation energies for B, Al, and Ag in Si

Plasma-stimulated great reduction of diffusion activation energies for B, Al, and Ag in Si

Impact of Magnetic-Pulse and Chemical-Thermal Treatment on Alloyed Steels’ Surface Layer

Capacitively coupled plasma-stimulated room-temperature Mg and Mn doping and electrical activation in GaAs

Contact Info

Product

Resources

About