Capacitively coupled plasma-stimulated room-temperature Mg and Mn doping and electrical activation in GaAs

Li, Lei; Zang, Zhihao; Ma, Ning; He, Youqin; Chen, Xiao; Xu, Wanjin; Feng-Po, Yuan; Qin, G. G.

doi:10.1007/s00339-019-2522-z

Cited by 1 publication

(4 citation statements)

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“…The second pathway is a pure diffusion process reported in previous literatures [1][2][3][4][5]. It is believed that the ionized impurity ions in plasma are uniformly distributed over the surface of Si wafers, which can directly diffuse into the Si wafer due to the concentration gradient.…”

Section: Results and Analysismentioning

confidence: 94%

“…This work made an in-depth study on the transport of B, Al and Ag ions in a plasma-Si system. It is considered that the plasma-stimulated ion transport could be well described by an implantation-diffusion twostep process rather than a pure diffusion process reported previously [1][2][3][4][5]. The first step is the impurity ion implantation under the sheath voltage induced by plasma.…”

Section: Introductionmentioning

confidence: 96%

“…Several works of Qin research group reported a series of intriguing experiments, which revolve around the plasma-stimulated impurity ion transport in multiple types of semiconductors (Si, GaAs, GaN and SiC) [1][2][3][4][5]. Secondary ion mass spectroscopy (SIMS) results reveal that the transport distances for the majority of reported impurities are up to tens of nanometers within several-minute plasma treatment.…”

Section: Introductionmentioning

confidence: 99%

“…Secondary ion mass spectroscopy (SIMS) results reveal that the transport distances for the majority of reported impurities are up to tens of nanometers within several-minute plasma treatment. The earliest works simply interpreted this impurity ion transport as a pure plasma-stimulated ion diffusion process, ignoring the characteristic impurity ion concentration peak near the surface [1][2][3][4]. Not until very recently did Li et al notice the effect of ion implantation process induced by plasma sheath voltage, which may account for this characteristic peak [3].…”

Section: Introductionmentioning

confidence: 99%

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Plasma-stimulated great reduction of diffusion activation energies for B, Al, and Ag in Si

Zhang

et al. 2023

Phys. Scr.

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This work made an in-depth study on the transport of B, Al and Ag ions in an inductively coupled plasma-Si system. The plasma-stimulated impurity ion transport is demonstrated to be described by an implantation-diffusion two-step process rather than a pure diffusion process reported previously. The first step is impurity ion implantation under sheath voltage induced by plasma, which determines the impurity ion quantity into Si. The second step is plasma-stimulated impurity ion diffusion, which determines impurity ion transport depth in Si. An approximate solution to this implantation-diffusion process is deduced. Plasma-stimulated diffusion coefficients (D) for B, Al and Ag ions in Si are obtained by fitting the measured secondary ion mass spectroscopy concentration profiles with this equation. Furthermore, plasma-stimulated diffusion activation energies for B, Al and Ag ions in p-Si at 0-120 ºC are determined to be 0.22, 0.36 and 0.18 eV by Arrhenius plots, which are much lower than diffusion activation energies of 0.4-0.7, 1.2 and 1.15 eV for interstitial B, Al and Ag ions in Si without plasma reported in literatures. The great reduction of diffusion activation energy makes it possible for impurities to diffuse at room temperature or lower temperatures. The view of plasma-stimulated impurity ion transport is of significant importance on semiconductor technology and device degradation research.

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