Abstract:This work made an in-depth study on the transport of B, Al and Ag ions in an inductively coupled plasma-Si system. The plasma-stimulated impurity ion transport is demonstrated to be described by an implantation-diffusion two-step process rather than a pure diffusion process reported previously. The first step is impurity ion implantation under sheath voltage induced by plasma, which determines the impurity ion quantity into Si. The second step is plasma-stimulated impurity ion diffusion, which determines impur… Show more
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