Ultra Sensitive Label-Free Detection of Biomolecules Using Vertically Extended Drain Double Gate <i>Si</i>₀.₅<i>Ge</i>₀.₅ Source Tunnel FET

Priyadarshani, Kumari Nibha; Singh, Sangeeta

doi:10.1109/tnb.2021.3106333

Cited by 20 publications

(7 citation statements)

References 33 publications

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“… where as E g denotes the engery gap between CB and VB at tunneling junction, m* shows the effective mass, represents the tunneling length and expresses in Eq. ( 2 ) [ 32 ] where as , , shows the dielectric constant of silicon, dielectric constant of biomolecules and body thickness respectively. The total thickness under the gate is represents as which is the summation of gate oxide and cavity thickness.…”

Section: Device Structure and Simuation Frameworkmentioning

confidence: 99%

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

Kumar

Raj

2022

Trans. Electr. Electron. Mater.

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This paper reports the performance assessment of vertical silicon nanowire TFET (V-siNWTFET) design for biosensor applications using dielectric-modulation and gate underlap technique. The sensitivity of the V-siNWTFET is recognizing by immobilizing the different biological molecules such as lipids, biotin, uricase, protein, Gox, streptavidin, uriease, zein etc. in the cavity region which is created under the gate electrode and source oxide. The performance analysis is observed by varying the relative permittivity of the different biomolecules and analyzes the parametric variation both for neutral and charged biomolecules. The sensitivity of the biosensor has been detecting in the terms of drain current (I D ), threshold voltage (V TH ), subthreshold slope (SS), transconductance (g m ), and I ON /I OFF ratio. The proposed device structure has capable to reduce the leakage currents and high sensitivity biosensor design in the nanoscale regimes. The obtained best optimum parameters of the proposed devices are I ON (1.37E−08 A/µm), I OFF (9.44E−19 A/µm), SS (29.97 mV/dec) and I ON /I OFF (4.29E + 10) ratio with gate work-function (ϕ gate = 4.8 eV) and uniformly doped (1 × 10 –19 cm −3 ) silicon nanowire at drain to source voltage (V DS = 1.0 V). The higher sensitivity of the proposed V-siNWTFET for Biosensor is observed for Zein biomolecules (K = 5).

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Section: Device Structure and Simuation Frameworkmentioning

confidence: 99%

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

Kumar

Raj

2022

Trans. Electr. Electron. Mater.

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“…Despite all of these advantages, a strong prevalence of parasitic capacitance in FinFET devices [23] is likely to result in large overlap of the immobilized biomolecule capacitance with the device capacitance, which could adversely impact the sensitivity of short-channel FinFET-based biosensors [24,25]. Also, even with excellent I ON /I OFF and steep switching reports in TFET devices [26][27][28][29][30], a great disparity in measured and simulated device behavior has been seen [31]. In addition, biosensors based on TFET devices are likely to be more susceptible to low-frequency noise [33], along with observation of limits of the scalability and hence sensitivity due to a strong dependence on the size and position of the cavity (located close to the tunneling barrier [34]).…”

Section: Introductionmentioning

confidence: 99%

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

Kansal,

Medury

2024

Semicond. Sci. Technol.

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Dielectrically modulated (DM) Negative Capacitance Field Effect Transistor (NCFET) based label-free Biosensors have emerged as promising devices for accurate detection of various biomolecules, where the sensitivity of DM architectures strongly depends on the sensing mechanism as well as on the size of the nano-cavity. Therefore, to achieve higher sensitivity along with reduced fabrication complexity, we propose to utilize a pre-existing drain-sided spacer region as a nano-cavity, in a Fully Depleted Silicon-on-insulator (FDSOI) based NCFET architecture. The Ferroelectric (FE) layer in the Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration meaningfully alters the impact of drain's electric field on the source-sided electrostatics, which results in higher sensitivity. Having quantified the sensitivity for an FE-DE gate stack based NCFET Biosensor, we now propose to include a Paraelectric (PE) layer between Ferroelectric (FE) and Dielectric (DE) materials, thus modifying the gate stack from FE-DE to FE-PE-DE with an equivalent negative capacitance seen from both the stacks, where a remarkable improvement is seen in the FE-PE-DE gate stack based NCFET with nearly identical linearity performance as seen from the high value of Pearson's coefficient (r2 ≥ 0.9). Therefore, in order to illustrate the efficacy of the proposed sensing mechanism and the modified gate stack (FE-PE-DE), dielectric constant (kBio) values in the range of kBio = 4.5 to kBio = 75.99 are considered. Finally, the effect of scaling the channel length (Lg) on the sensitivity of the FE-PE-DE NCFET device is shown and a high value, particularly at lower permittivity, demonstrates the versatility and wide applicability of the proposed NCFET Biosensor.

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“…This was attributed to the smaller response time and lower leakage of TFET biosensors. In recent years, various types of TFET-based biosensors with different architectures such as core–shell nanotubes 5 , vertical 6 – 8 and bilayer 9 structures, have been proposed. In 2008, Hueting et al proposed the first charge plasma-based diode in which metals with appropriate work functions induced the electrons and holes in an intrinsic semiconductor instead of using dopants 10 .…”

Section: Introductionmentioning

confidence: 99%

Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction

Cherik

Mohammadi

2023

Sci Rep

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This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect transistor. It comprises a dual doping-less tunneling junction that lies above an n+ drain region. By employing the wet-etching technique, two cavities are carved in the gate dielectric, and with the entry of various biomolecules into the cavities, the electrostatic integrity of the gate changes, accordingly. Numerical simulations, carried out by the Silvaco ATLAS device simulator, show that including trap-assisted tunneling significantly modulate the biosensor's main parameters, such as on-state current, subthreshold swing, and transconductance and their corresponding sensitivities. We also evaluate the effect of semi-filled cavities on our proposed biosensor’s performance with various configurations. The FOMs like Ion/Ioff = 2.04 × 106, $${S}_{{I}_{ds}}$$ S I ds =1.48 × 105, and $${S}_{SS}$$ S SS =0.61 in the presence of TAT show that our proposed biosensor has a promising performance.

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Ultra Sensitive Label-Free Detection of Biomolecules Using Vertically Extended Drain Double Gate Si₀.₅Ge₀.₅ Source Tunnel FET

Cited by 20 publications

References 33 publications

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction

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