Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction

Cherik, Iman Chahardah; Mohammadi, Saeed

doi:10.1038/s41598-023-38651-3

Cited by 7 publications

(3 citation statements)

References 27 publications

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“… Ref. Year Architecture Material V Bias (V) 38 2019 Double gate junction-less TFET Si ~ 100 1.2 39 2021 Extended gate HTFET InGaAs/Si 90 1.5 40 2021 FinFET GaAs 1−x Sb x 98.4 1 41 2021 Negative capacitance FinFET Si 99.99 1 27 2023 Vertical dual doping-less tunneling junction Si 98.58 1.5 This work 2023 Double gate TFET Si 74.47 1 …”

Section: Simulation Resultsmentioning

confidence: 99%

Fringe-fields-modulated double-gate tunnel-FET biosensor

Chahardah Cherik,

Mohammadi

2024

Sci Rep

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This paper aims to evaluate a groundbreaking bio-TFET that utilizes the fringe fields capacitance concept to detect neutral and charged biomolecules. While facilitating fabrication process and scalability, this innovative bio-TFET is able to rival the conventional bio-TFET which relies on carving cavities in the gate oxide. The cavities of the proposed device are carved in the spacers over the source region and in the vicinity of the gate metal. Inserting biomolecules in the cavities of our bio-TFET modifies the fringe fields arising out of the gate metal. As a result, these spacers modulate tunneling barrier width at the source-channel tunneling junction. We have assessed our proposed device’s DC/RF performance using the calibrated Silvaco ATLAS device simulator. For further evaluation of the reliability of our bio-TFET, non-idealities, such as trap-assisted tunneling and temperature, are also studied. The device we propose is highly suitable for biosensing applications, as evidenced by the parameters of $${S}_{{I}_{ds}}$$ S I ds = 1.21 × 103, SSS = 0.365, and $${S}_{{f}_{T}}$$ S f T = 1.63 × 103 at VGS = 1 V.

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Section: Simulation Resultsmentioning

confidence: 99%

Fringe-fields-modulated double-gate tunnel-FET biosensor

Chahardah Cherik,

Mohammadi

2024

Sci Rep

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“…Despite all of these advantages, a strong prevalence of parasitic capacitance in FinFET devices [23] is likely to result in large overlap of the immobilized biomolecule capacitance with the device capacitance, which could adversely impact the sensitivity of short-channel FinFET-based biosensors [24,25]. Also, even with excellent I ON /I OFF and steep switching reports in TFET devices [26][27][28][29][30], a great disparity in measured and simulated device behavior has been seen [31]. In addition, biosensors based on TFET devices are likely to be more susceptible to low-frequency noise [33], along with observation of limits of the scalability and hence sensitivity due to a strong dependence on the size and position of the cavity (located close to the tunneling barrier [34]).…”

Section: Introductionmentioning

confidence: 99%

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

Kansal,

Medury

2024

Semicond. Sci. Technol.

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Dielectrically modulated (DM) Negative Capacitance Field Effect Transistor (NCFET) based label-free Biosensors have emerged as promising devices for accurate detection of various biomolecules, where the sensitivity of DM architectures strongly depends on the sensing mechanism as well as on the size of the nano-cavity. Therefore, to achieve higher sensitivity along with reduced fabrication complexity, we propose to utilize a pre-existing drain-sided spacer region as a nano-cavity, in a Fully Depleted Silicon-on-insulator (FDSOI) based NCFET architecture. The Ferroelectric (FE) layer in the Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration meaningfully alters the impact of drain's electric field on the source-sided electrostatics, which results in higher sensitivity. Having quantified the sensitivity for an FE-DE gate stack based NCFET Biosensor, we now propose to include a Paraelectric (PE) layer between Ferroelectric (FE) and Dielectric (DE) materials, thus modifying the gate stack from FE-DE to FE-PE-DE with an equivalent negative capacitance seen from both the stacks, where a remarkable improvement is seen in the FE-PE-DE gate stack based NCFET with nearly identical linearity performance as seen from the high value of Pearson's coefficient (r2 ≥ 0.9). Therefore, in order to illustrate the efficacy of the proposed sensing mechanism and the modified gate stack (FE-PE-DE), dielectric constant (kBio) values in the range of kBio = 4.5 to kBio = 75.99 are considered. Finally, the effect of scaling the channel length (Lg) on the sensitivity of the FE-PE-DE NCFET device is shown and a high value, particularly at lower permittivity, demonstrates the versatility and wide applicability of the proposed NCFET Biosensor.

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“…While some studies have investigated line tunneling mechanisms to simplify manufacturing and increase conduction current [ 14 – 17 ], precise ion implantation in miniature devices remains a challenge. Alternative strategies, such as charge plasma [ 18 – 20 ] and advanced gate configurations [ 21 , 22 ], aimed to simplify the doping process and boost on-current but have not provided a complete solution. Noteworthy, some alternative works try to enhance line tunneling using symmetry structure.…”

Section: Introductionmentioning

confidence: 99%

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Lin,

Cheng

2023

Discover Nano

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In this paper, we present a new novel simple iTFET with overlapping gate on source-contact (SGO), Drain Schottky Contact, and intrinsic SiGe pocket (Pocket-SGO iTFET). The aim is to achieve steep subthreshold swing (S.S) and high ION current. By optimizing the gate and source-contact overlap, the tunneling efficiency is significantly enhanced, while the ambipolar effect is suppressed. Additionally, using a Schottky contact at the drain/source, instead of ion implantation drain/source, reduces leakage current and thermal budget. Moreover, the tunneling region is replaced by an intrinsic SiGe pocket posing a narrower bandgap, which increases the probability of band-to-band tunneling and enhances the ION current. Our simulations are based on the feasibility of the actual process, thorough Sentaurus TCAD simulations demonstrate that the Pocket-SGO iTFET exhibits an average and minimum subthreshold swing of S.Savg = 16.2 mV/Dec and S.Smin = 4.62 mV/Dec, respectively. At VD = 0.2 V, the ION current is 1.81 $$\times$$ × 10–6 A/μm, and the ION/IOFF ratio is 1.34 $$\times$$ × 109. The Pocket-SGO iTFET design shows great potential for ultra-low-power devices that are required for the Internet of Things (IoT) and AI applications.

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Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction

Cited by 7 publications

References 27 publications

Fringe-fields-modulated double-gate tunnel-FET biosensor

Fringe-fields-modulated double-gate tunnel-FET biosensor

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

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