Ultra-Narrow Mode-Beating Spectral Line-Width of a Passively Mode-Locked Quantum Dot Fabry-Perot Laser Diode

Shen, Alexandre; Gosset, C.; Renaudier, J.; Duan, Guang‐Hua; Oudar, J-L; Lelarge, F.; Pommereau, F.; Poingt, F.; Gouézigou, L. Le

doi:10.1109/ecoc.2006.4801434

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…In this section we report on the characteristics of a QDash-based MLLs operating in three repetition frequency ranges: 10 GHz to 20 GHz, 40 GHz, and 245 GHz [2,19,[33][34][35][36]41]. Low repetition rate (10-20 GHz) MLLs have applications for OTDM and optical sampling; 40 GHz is ideal for 40 Gb/s or higher bit rate optical transmission through OTDM and all-optical clock recovery.…”

Section: Pulse Generationmentioning

confidence: 99%

High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

et al. 2009

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Several applications are pushing the development of high performance mode-locked lasers: generation of short pulses for extremely high bit rate transmission at 100 Gb/s and beyond, all-optical MLLs. For instance, they are very compact, with a length usually not exceeding 4 mm. The pulse repetition rate can be as high as 500 GHz [4]. They are very efficient, having a high power conversion efficiency.

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Section: Pulse Generationmentioning

confidence: 99%

High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

et al. 2009

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“…RF spectral linewidth of 50 kHz was measured from the 990 µm device exhibiting 42.2 GHz pulse repetition rate and 2 ps auto-correlated pulses. The ability to reduce the mode beating linewidth to 2 kHz by an inclusion of an optical filter was demonstrated by Shen et al [294] on a 2.5 mm long, 17 GHz Qdash mode-locked laser, and further showed that reduction in the optical confinement factor also decreased the mode beating linewidth [295]. In general, these high performance characteristics were attributed to the reduction in the active region dimensionality resulting in reduced interaction of the optical mode with the amplified spontaneous emission, and large population inversion, which reduces the phase noise, apart from FWM process [250,296].…”

Section: Self-pulsationmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…Moreover, the pulse repetition rate was reported to be 42.2 GHz with 2 ps auto-correlated pulses. Shen et al [78] demonstrated the viability in employing optical filters in order to limit the beating linewidth to 2 kHz on a 17 GHz, 2.5 mm long Qdash mode-locked laser (QD-MLL). Later on, reducing the optical confinement factor was show to have a similar effect on the beating linewidth [79].…”

Section: Inas/inp Qdash Mode-locked Lasersmentioning

confidence: 99%

InAs/InP quantum-dash lasers

Khan

Alkhazraji

et al. 2019

Nanoscale Semiconductor Lasers

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Ultra-Narrow Mode-Beating Spectral Line-Width of a Passively Mode-Locked Quantum Dot Fabry-Perot Laser Diode

Cited by 6 publications

References 3 publications

High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

InAs/InP quantum-dash lasers

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