High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

Duan, Guang‐Hua; Shen, Alexandre; Akrout, Akram; Dijk, Frédéric van; Lelarge, F.; Pommereau, F.; Legouezigou, O.; Provost, Jean-Guy; Gariah, H.; Blache, F.; Mallécot, F.; Merghem, K.; Martinez, A.; Ramdane, A.

doi:10.1002/bltj.20388

Cited by 63 publications

(43 citation statements)

References 44 publications

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“…These are record values when compared to the results obtained from devices with a similar geometry and based on QW material as presented up to date [7], [16]. The values are comparable to those reported from quantum dash based lasers [17], [18]. The high resolution of the optical spectrum analyzer (down to 20 MHz) allowed for measurements of a linewidth directly from the optical spectrum.…”

Section: Optical Coherent Combsupporting

confidence: 82%

Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser

Moskalenko¹,

Latkowski²,

Tahvili³

et al. 2014

Opt. Express

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Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laserMoskalenko, V.; Latkowski, S.; Tahvili, M.S.; Vries, de, Tjibbe; Smit, M.K.; Bente, E.A.J.M. Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Moskalenko, V., Latkowski, S., Tahvili, M. S., Vries, de, T., Smit, M. K., & Bente, E. A. J. M. (2014). Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser. Optics Express, 22(23), 28865-28874. DOI: 10.1364/OE.22.028865 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract:In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.

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Section: Optical Coherent Combsupporting

confidence: 82%

Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser

Moskalenko¹,

Latkowski²,

Tahvili³

et al. 2014

Opt. Express

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“…Tunneling injection scheme was also investigated by Lelarge et al [240,241] GHz range with an extracted resonance frequency ~8.5 GHz, and measured small signal modulation bandwidth of about 4.5 GHz, which showed strong parasitic-like roll off related to carrier transport limitations [240]. This insignificant effect of tunneling scheme on the laser dynamic characteristics was related mainly to the large escape of carriers from the injectorQdash ensembles which could be improved via higher energy barriers or moderate p-doping as has been demonstrated by Mi et al [186] utilizing both p-doping and tunnel injection scheme.…”

Section: Inas/ingaasp Materials Systemmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…III-V semiconductor low dimensional structures are attractive for optoelectronic devices, including laser diodes and infrared photodetectors [1]- [6]. The semiconductor quantum dots/quantum dashes (QDs) devices have a lower threshold current density, with a higher gain, and higher thermal stability because of energy confinement compared to bulk and quantum well lasers [4].…”

Section: Introductionmentioning

confidence: 99%

“…The semiconductor quantum dots/quantum dashes (QDs) devices have a lower threshold current density, with a higher gain, and higher thermal stability because of energy confinement compared to bulk and quantum well lasers [4]. InAs/GaAs-based QDs devices emit a laser light at 1.3 µm wavelength [7] [8] [9], while InAs/InP-based QDs devices allow a laser emission in the 1.4 to 1.6 µm wavelength range [2] [3] [4] [5] [6].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

Kuruoğlu¹,

Özdemi̇r²,

Bozkurt³

2017

MSCE

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Charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence measurements over InAs/InP, and InAs/GaAs based p-i-n structures. In InAs/InP elongated QDs (QDashes) structure, injected carriers were tunneled from the quantum well into QDashes through a thin barrier and subsequently recombined within QDashes. Meanwhile, for InAs/GaAs structure, tunneling kind transport was exhibited in both forward and reverse bias voltage directions. The onset of light took place when the forward bias exceeded 1.3 V (3 V) for InAs/InP (InAs/GaAs) p-i-n structure through electroluminescence measurements. The peak value of emitted laser light for InAs/InP QDashes and InAs/GaAs QDs occurred in 1.55 µm and 1.3 µm, respectively.

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High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

Cited by 63 publications

References 44 publications

Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser

Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

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