Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

Abstract

Charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence measurements over InAs/InP, and InAs/GaAs based p-i-n structures. In InAs/InP elongated QDs (QDashes) structure, injected carriers were tunneled from the quantum well into QDashes through a thin barrier and subsequently recombined within QDashes. Meanwhile, for InAs/GaAs structure, tunneling kind transport was exhibited in both forward and reverse bias voltage directions. The onset of light took place when the forward bias exceeded 1.3 V (3 V) for InAs/InP (InAs/GaAs) p-i-n structure through electroluminescence measurements. The peak value of emitted laser light for InAs/InP QDashes and InAs/GaAs QDs occurred in 1.55 µm and 1.3 µm, respectively.

External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot

“…The structure showed strong photoluminescence emissions were more efficient integration of NFGQDs exist as a result of the large ZnO surface area. Neslihan Ayarcı Kuruoğlu et al [6] investigate the Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures. The charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence measurements over InAs/InP, and InAs/GaAs based p-i-n structures, they found that the peak value of emitted laser light for InAs/InP QDashes and InAs/GaAs QDs occurred in 1.55 μm and 1.3 μm, respectively.…”