Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application

Abstract

The monolithic integration of tunneling diodes 0 s ) with other semiconductor devices such as HEMTs or HBTS, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT\TD based voltage controlled oscillator operating in the 6GHz band suitable for wireless applications. The circuit draws a current of 1.7511~4 at 5OOmV and generates an output power of -16dBm The maximum tuning range is 15OMHz and the single sideband-twarrier ratio (SSCR) is of -1OSdBdHz at 5MHz. n++ -I~AIAS

Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

“…[1][2][3][4] Compared to their all-transistor counterparts, the combination of suitable tunnel diodes with transistors utilizes, in general, fewer devices, less chip area, and reduced power consumption for the same functionality. This is one thrust perceived by the International Technology Roadmap for Semiconductors ͑ITRS͒ to mitigate pressures to achieve aggressively scaled complementary MOS.…”