2006
DOI: 10.1016/j.sse.2006.04.044
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Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications

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Cited by 11 publications
(4 citation statements)
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“…However the main stream of the ULSI is still the Si-based CMOS or SiGe-based BiCMOS process at present. Some researchers have proposed the Si/SiGe RTD and resonant interband tunneling diodes (RITD) constructed by the strained layer and quantum-well mechanical tunneling structure [7][8][9]. Although the devices are based on Si/SiGe material, the fabrication process still requires the CVD or MBE system.…”
Section: Introductionmentioning
confidence: 99%
“…However the main stream of the ULSI is still the Si-based CMOS or SiGe-based BiCMOS process at present. Some researchers have proposed the Si/SiGe RTD and resonant interband tunneling diodes (RITD) constructed by the strained layer and quantum-well mechanical tunneling structure [7][8][9]. Although the devices are based on Si/SiGe material, the fabrication process still requires the CVD or MBE system.…”
Section: Introductionmentioning
confidence: 99%
“…The RTD also could be made of the strained Si/SiGe quantum-well structure [3], but it was not easy to modulate the current-voltage (I-V) characteristic. Recently, the Si-based resonant interband tunneling diodes (RITD) monolithically integrating with Si/ SiGe heterojunction bipolar transistors (HBT) on silicon substrates had been successfully developed in some applications [4][5][6]. However the fabricated process of these devices is utilized the Si-based CMOS technique combined with low-temperature MBE system.…”
Section: Introductionmentioning
confidence: 99%
“…In spite of the narrow process windows, SiGe RITDs have been successfully integrated with both complementary metal oxide semiconductor (CMOS) transistors [6] and heterojunction bipolar transistors (HBT) [7] to form elementary logic circuits. The ease of integration of the RITD would be enhanced if they could be fabricated using only Si, without the added complication of the critical thickness constraints and residual strain of SiGe spacers or the requirement of post-growth anneal.…”
mentioning
confidence: 99%