Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications

Chung, Sung-Yong; Park, Si Young; Daulton, Jeffrey; Yu, Rui; Berger, Paul R.; Thompson, Phillip E.

doi:10.1016/j.sse.2006.04.044

Cited by 11 publications

(4 citation statements)

References 19 publications

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“…However the main stream of the ULSI is still the Si-based CMOS or SiGe-based BiCMOS process at present. Some researchers have proposed the Si/SiGe RTD and resonant interband tunneling diodes (RITD) constructed by the strained layer and quantum-well mechanical tunneling structure [7][8][9]. Although the devices are based on Si/SiGe material, the fabrication process still requires the CVD or MBE system.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Gan

Liang

Tsai

et al. 2008

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Gan

Liang

Tsai

et al. 2008

Solid-State Electronics

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“…The RTD also could be made of the strained Si/SiGe quantum-well structure [3], but it was not easy to modulate the current-voltage (I-V) characteristic. Recently, the Si-based resonant interband tunneling diodes (RITD) monolithically integrating with Si/ SiGe heterojunction bipolar transistors (HBT) on silicon substrates had been successfully developed in some applications [4][5][6]. However the fabricated process of these devices is utilized the Si-based CMOS technique combined with low-temperature MBE system.…”

Section: Introductionmentioning

confidence: 99%

Multiple-input NOR logic design using negative differential resistance circuits implemented by standard SiGe process

Gan

Tsai

Liang

et al. 2008

Solid-State Electronics

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“…In spite of the narrow process windows, SiGe RITDs have been successfully integrated with both complementary metal oxide semiconductor (CMOS) transistors [6] and heterojunction bipolar transistors (HBT) [7] to form elementary logic circuits. The ease of integration of the RITD would be enhanced if they could be fabricated using only Si, without the added complication of the critical thickness constraints and residual strain of SiGe spacers or the requirement of post-growth anneal.…”

mentioning

confidence: 99%

P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

et al. 2009

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Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm 2 . The as-grown Si p þ in þ structures were synthesised using solid source molecular beam epitaxy, incorporating B and P d-doped layers. Both structures have shown thermal stability after 1 min post-growth anneals up through 6758C and the PVCR improves to 2.8 for a 5758C 1 min anneal.Introduction: A driving force in electronic device research has been increased functionality and density with reduced energy losses. One of the techniques proposed for meeting these goals has been the employment of tunnel diodes integrated with conventional transistors to form compact and low-power memory, logic and mixed-signal circuits. Considerable progress has been made in the area of Si-based resonant interband tunnel diodes (RITDs). Discrete RITDs have been reported that have a peak-to-valley current ratio (PVCR) greater than 6 [1], peak current densities (PCD) greater than 218 kA/cm 2 [2], and voltage swings, V s , greater than 560 mV [3]. All of these devices have features in common: 1) the electron tunnelling occurs between bound states in the valence band and the conduction band created by highlydoped layers formed by d-doping; 2) a spacer layer between the two d-doped layers which includes Si 1-x Ge x to reduce the bandgap and reduce the out-diffusion of dopants from the B d-doped layer; 3) epitaxial growth at low temperature to reduce both the diffusion of dopants and the segregation of constituents during the growth; and 4) a post-growth anneal to reduce the effect of point defects which occur due to the low temperature epitaxial growth.In particular, room temperature RITD performance has been shown to be sensitive to Ge concentration [4], the width of the spacer layer [5] and to the temperature of the post-growth anneal [1,3,4]. In spite of the narrow process windows, SiGe RITDs have been successfully integrated with both complementary metal oxide semiconductor (CMOS) transistors [6] and heterojunction bipolar transistors (HBT) [7] to form elementary logic circuits. The ease of integration of the RITD would be enhanced if they could be fabricated using only Si, without the added complication of the critical thickness constraints and residual strain of SiGe spacers or the requirement of post-growth anneal. In this Letter, we report the formation of discrete Si RITDs that are designed and fabricated so that neither a Ge alloy layer nor a post-growth anneal is required to obtain a Si tunnel diode suitable for integration. In addition, the thermal stability of the Si-RITDs are investigated in the temperature interval 500 to 6758C, since the devices may be exposed to these temperatures during integrated circuit fabrication, such as the formation of ohmic contacts.

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Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications

Cited by 11 publications

References 19 publications

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Multiple-input NOR logic design using negative differential resistance circuits implemented by standard SiGe process

P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

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