2008
DOI: 10.1016/j.sse.2008.01.006
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Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

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Cited by 5 publications
(3 citation statements)
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“…Recently, our research group has demonstrated two novel NDR circuits composed of Si-based metal-oxidesemiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, which are named as MOS-NDR and MOS-HBT-NDR circuits. We have successfully demonstrated their possible application in the multiple-valued memory circuit [9], logic circuit [10], and multiplexer [11]. The fabrication of such NDR-based applications could be implemented by the standard CMOS and BiCMOS techniques.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, our research group has demonstrated two novel NDR circuits composed of Si-based metal-oxidesemiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, which are named as MOS-NDR and MOS-HBT-NDR circuits. We have successfully demonstrated their possible application in the multiple-valued memory circuit [9], logic circuit [10], and multiplexer [11]. The fabrication of such NDR-based applications could be implemented by the standard CMOS and BiCMOS techniques.…”
Section: Introductionmentioning
confidence: 99%
“…Fig. 1a shows the schematic of the proposed positive edge triggered (PET) programmable MOS-NDR device, based on the structure of the non-programmable MOS-NDR device described in [5]. Figure 1b depicts its I-V characteristic.…”
Section: Introductionmentioning
confidence: 99%
“…As described previously, our programmable MOS-NDR device allows this input-controlled modification. Note that other programmable MOS-NDR devices have been proposed that control the peak current by modifying voltage V INV [4], and so are not suitable to implement series-connected gates. The MOBILE operating principle can be easily extended to implement threshold logic gates as it has been demonstrated using RTDs [1,2].…”
mentioning
confidence: 99%