Single phase MOS-NDR mobile networks

Abstract

Devices with an I-V characteristic exhibiting Negative Differential Resistance (NDR) are attractive from the circuit design point of view as it has been demonstrated by Resonant Tunneling Diodes (RTDs) circuits. Ideas coming from RTDbased designs can be exported to an "all CMOS" environment by using transistor circuits to generate the NDR characteristic (MOS-NDR). In this paper novel programmable MOS-NDRs are proposed and used to realize threshold logic gates on the basis of the MOnostable to BIstable Operating principle. It is shown that these gates can be connected to build up networks that are operated in a pipelined fashion using a single phase clock scheme.