Ultra low power low noise amplifiers for wireless communications

An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

“…For such applications, antimonide-based compound semiconductor (ABCS) InAs/AlSb HEMTs are particularly promising because of their combination of high electron mobility and peak velocity, along with high electron concentration in the 2DEG that results in unparalleled speed-power performance. The InAs/AlSb HEMT's inherent low-voltage operation, with below 0.5 V, can reduce dc power dissipation by an order of magnitude compared with a GaAs PHEMT of equivalent performance [1], [2], and by a factor of three to four compared to an equivalent InP HEMT [3], [4]. In the case of active-array space-based radar applications, ABCS LP-LNAs are a system enabler because they permit a substantial reduction in the required spacecraft prime power and corresponding spacecraft weight and launch cost [5], [6].…”

In-band phase noise reduction techniques for phase-locked loops in advanced CMOS technologies

“…where is an integer that ( + More generally, if there are phases to be selected, the output frequency would be = ( + ) , (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21) and the tuning step would be ∆ = . (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) This means that a finer tuning step can be achieved with more phases provided. The average shifted phase number during each is thus…”

“…It was the time when designers faced many challenges when fabricating RF circuits on CMOS process. However, many of these challenges have been resolved, such as high-quality on-chip inductors [1]- [4], wide-band CMOS oscillators [5]- [7], CMOS low-noise amplifiers [8]- [10], etc. Moreover, due to the surge of consumer electronics such 2 as smartphones and entertainment electronics, wireless applications evolve towards low power, small dimensions, higher yield, and higher level of integration owing to its low cost.…”

“…As will be seen later, this is much lower than the contribution from phase noise of the oscillator. However, (4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15) does limit the signal bandwidth as the quantization noise increases dramatically with .…”

Low DC power monolithic low noise amplifier for wireless applications at 5 GHz

“…These systems demand for low noise amplifiers (LNAs) with low DC power consumption. There have been a number of recent papers on low power LlVAs in the range of 900 MHdL-band [1,2] and S-band [3,4,5]. Generally the lowest noise figures are obtained with heterojunction FETs (HEMTs) or bipolar transistors (HBTs).…”