An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

“…Much progress in InAs(Sb)/Al(Ga)Sb and In(Ga)Sb/InAlSb HEMTs have been reported and studied [1][2]. The electronic band structure of InAs enables to obtain faster electron transport owing to its lower effective mass (0.023mo) in the C-valley relative to most of all other common III-V semiconductors, except InSb, and a large C-L valley separation (relative to the band gap) of 0.72 eV.…”

AlGaSb Buffer Layers for Sb-Based Transistors

“…Low-noise amplifier (LNA) MMICs were reported by teams led by Northrop-Grumman and Teledyne Corporations. The LNAs operate in the X-band, 8 Ka-band, 9 and W-band. 10,11 For example, a three-stage W-band LNA was demonstrated with 11 dB gain at a total chip dissipation of only 1.8 mW at 94 GHz.…”

The growth of high electron mobility InAsSb for application to high electron-mobility transistors

“…Compound semiconductors with lattice constant around 6.1 Å have drawn much attention in recent years due to their high electron mobility, which makes them good candidates for highspeed and low-power electronic applications [1,2]. Despite the excellent transport characteristics of these alloys, the lack of lattice-matched semi-insulating substrates with high quality and attainability severely limits their development.…”