Ultra-high tunability in polycrystalline Ba1−xSrxTiO3 thin films

Harris, Douglas W.; Lam, Peter G.; Burch, Matthew J.; Li, J.; Rogers, Brandon; Dickey, Elizabeth C.; Maria, Jon Paul

doi:10.1063/1.4893615

Cited by 7 publications

(8 citation statements)

References 30 publications

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“…Thus, with strong sources the film will be fine-grained and less oriented than that grown in the presence of weak sources under conditions close to equilibrium, when the islands of small size dissolve and are absorbed by larger ones. These alterations are accompanied by a change in the crystal lattice orientation and by an increase in the grain size [23].…”

Section: Resultsmentioning

confidence: 98%

Ferroelectric BaSrTiO₃films structured by an intermediate annealing during the deposition

Tumarkin

Razumov

Odinets

et al. 2016

Integrated Ferroelectrics

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Ba,Sr)TiO 3 layered thin films were grown by radio-frequency magnetron sputtering of a ceramic target on Pt/Ti-buffered sapphire substrate. The structural and microwave properties of the films were improved by an intermediate annealing of the layers during the growing process. Ferroelectric tunable capacitors based on these films show a tunability n = 83% at electric field strength of 80 V/μm, an absence of the capacitance slow relaxation up to 40 V/µm and the dielectric losses not higher than 4% at frequency of 2 GHz. These values represent substantial improvements when compared to conventionally grown tunable dielectric films.

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Section: Resultsmentioning

confidence: 98%

Ferroelectric BaSrTiO₃films structured by an intermediate annealing during the deposition

Tumarkin

Razumov

Odinets

et al. 2016

Integrated Ferroelectrics

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“…The sputtering technique has been Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. employed for the thin films preparation for more than a century [12], and in the BSTO layers deposition is even a useful process with excellent results [13,14].…”

Section: Introductionmentioning

confidence: 99%

Local hardening of Raman phonons in Ba_xSr_1−xTiO₃ thin films deposited by r.f. sputtering

Zelaya-Ángel

Meléndez‐Lira

Reséndiz-Muñoz

et al. 2020

Mater. Res. Express

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Thin films of nanometric order of a solid solution of barium-strontium titanate Ba x Sr 1−x TiO 3 (BSTO), in the entire 0x1 range, were deposited at 495°C on quartz by RF reactive cosputtering. The composition was controlled through the RF power (P) applied to the targets. X ray diffractograms (XRD) reveal that all the samples show the cubic perovskite crystalline structure. The percentage of elements (x) in the films were evaluated by usingof electron dispersion spectroscopy, also through the change of the (110) lattice interplanar spacing determination of BSTO by means of XRD patterns. Experimental data points of concentration of Ba (x) and Sr (1−x) as a function of P describe a symmetric sigmoidal curve. The average crystal size for the whole composition is around 20 nm as estimated from XRD data. Raman measurements in the 100-900 cm −1 range show that optic phonons experience local hardening in the x interval 0.6-0.8. Around this region of x it is, in general, expected in BSTO a crystalline cubic-tetragonal phase transition when is prepared at low substrates temperatures. Distortion of the unit cell is observed in that interval, which probably originates the local hardening of phonons.

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“…While the community experienced success at temperatures above 900°C, there remains critical need for lower processing temperatures that enable integration with a wider variety of substrates, electrodes, and devices. Recently Ihlefeld et al, 7 Takahashi et al, 8 and Harris et al 9,10 demonstrated the ability of fluxes to assist in the growth of complex oxide epitaxial and polycrystalline thin films in a manner analogous to bulk liquidphase techniques. Specifically, in BaTiO 3 -based systems large increases in both permittivity 7,10 and nonlinear dielectric properties 9,10 were realized with the addition of a low melting point flux that encourages densification and grain growth at lower temperatures.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Recently Ihlefeld et al, 7 Takahashi et al, 8 and Harris et al 9,10 demonstrated the ability of fluxes to assist in the growth of complex oxide epitaxial and polycrystalline thin films in a manner analogous to bulk liquidphase techniques. Specifically, in BaTiO 3 -based systems large increases in both permittivity 7,10 and nonlinear dielectric properties 9,10 were realized with the addition of a low melting point flux that encourages densification and grain growth at lower temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Low‐Temperature Control of Twins and Abnormal Grain Growth in BaTiO₃

Harris

Burch

et al. 2015

J. Am. Ceram. Soc.

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The microstructure of polycrystalline barium titanate (BaTiO3) thin films processed with a liquid‐phase can be controlled by the crystallographic orientation of the underlying sapphire substrate. During postdeposition crystallization, the tendency for {111} twin nucleation, which drives subsequent abnormal grain growth, depends upon the specific sapphire facet. Specifically, tilting away from the close‐packed c‐plane modifies the orientation, morphology, and relative amount of an interfacial BaAl2O4 second phase. These factors control the density of twin formation, and thus overall grain size of the crystallized BaTiO3. As the substrate orientation transitions from c‐plane, to r‐plane, to a‐plane, the twin density is reduced, the average grain size decreases systematically from 270 to 130 nm, and the grain structure becomes overall more homogeneous. This twinning mechanism and abnormal grain growth occur by 900°C, several hundred degrees lower than reported previously.

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Ultra-high tunability in polycrystalline Ba_1−xSr_xTiO₃ thin films

Cited by 7 publications

References 30 publications

Ferroelectric BaSrTiO₃films structured by an intermediate annealing during the deposition

Ferroelectric BaSrTiO₃films structured by an intermediate annealing during the deposition

Local hardening of Raman phonons in Ba_xSr_1−xTiO₃ thin films deposited by r.f. sputtering

Low‐Temperature Control of Twins and Abnormal Grain Growth in BaTiO₃

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Ultra-high tunability in polycrystalline Ba1−xSrxTiO3 thin films

Cited by 7 publications

References 30 publications

Ferroelectric BaSrTiO3films structured by an intermediate annealing during the deposition

Ferroelectric BaSrTiO3films structured by an intermediate annealing during the deposition

Local hardening of Raman phonons in BaxSr1−xTiO3 thin films deposited by r.f. sputtering

Low‐Temperature Control of Twins and Abnormal Grain Growth in BaTiO3

Contact Info

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Ultra-high tunability in polycrystalline Ba_1−xSr_xTiO₃ thin films

Ferroelectric BaSrTiO₃films structured by an intermediate annealing during the deposition

Ferroelectric BaSrTiO₃films structured by an intermediate annealing during the deposition

Local hardening of Raman phonons in Ba_xSr_1−xTiO₃ thin films deposited by r.f. sputtering

Low‐Temperature Control of Twins and Abnormal Grain Growth in BaTiO₃