Thin ferroelectric barium strontium titanate (BST) layers of high structure quality have been grown for the first time directly on semi-insulating silicon carbide substrates by RF magnetron sputtering of a ceramic target. The structural and microwave properties of the films were substantially improved by an intermediate annealing of the layers during the growing process. Prepared under this approach, BST films have a well-formed crystal structure, which has a positive effect on their electrical properties, specifically on nonlinearity and dielectric losses. Planar capacitors based on these BST films demonstrate the best combination of high tunability and low losses for BST/SiC structures at microwaves.
Thin ferroelectric Ba x Sr 1 -x TiO 3 (BST) layers have been grown for the first time on semi-insulating silicon carbide substrates by RF magnetron sputtering of a ceramic target without using buffer sublayers. Results of investigation of the structure of obtained BST films and the electrical properties of related planar capacitors are presented. The obtained structures are characterized by high nonlinearity and low dielectric losses at microwave frequencies.
Ba,Sr)TiO 3 layered thin films were grown by radio-frequency magnetron sputtering of a ceramic target on Pt/Ti-buffered sapphire substrate. The structural and microwave properties of the films were improved by an intermediate annealing of the layers during the growing process. Ferroelectric tunable capacitors based on these films show a tunability n = 83% at electric field strength of 80 V/μm, an absence of the capacitance slow relaxation up to 40 V/µm and the dielectric losses not higher than 4% at frequency of 2 GHz. These values represent substantial improvements when compared to conventionally grown tunable dielectric films.
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