In this work, we present the stoichiometric behaviour of Ba 2+ and Sr 2+ when they are deposited to make a solid solution of barium strontium titanate. Ba x Sr 1−x TiO 3 (BST) thin films of nanometric order on a quartz substrate were obtained by means of in-situ RF-magnetron co-sputtering at 495 • C temperature, applying a total power of 120 W divided into intervals of 15 W that was distributed between two magnetron sputtering cathodes containing targets of BaTiO 3 and SrTiO 3 , as follows: 0-120, 15-105, 30-90, 45-75, 60-60, 75-45, 90-30, 105-15 and 120-0 W. Boltzmann's sigmoidal modified equation (Boltzmann's profile) is proposed to explain the behaviour and the deposition ratio Ba/Sr of the BST as a function of the RF-magnetron power. The Boltzmann's profile proposal shows concordance with experimental data of deposits of BST on substrates of nichrome under the same experimental conditions, showing differences in the ratio Ba/Sr of the BST due to the influence of the substrate.
A novel procedure based on the use of the Boltzmann equation to model the parameter, the film deposition rate, and the optical band gap of Ba x Sr 1−x TiO 3 thin films is proposed. The Ba x Sr 1−x TiO 3 films were prepared by RF cosputtering from BaTiO 3 and SrTiO 3 targets changing the power applied to each magnetron to obtain different Ba/Sr contents. The method to calculate consisted of fitting the angular shift of (110), (111), and (211) diffraction peaks observed as the density of substitutional Ba 2+ increases in the solid solution when the applied RF power increases, followed by a scale transformation from applied power to parameter using the Boltzmann equation. The Ba/Sr ratio was obtained from X-ray energy dispersive spectroscopy; the comparison with the X-ray diffraction derived composition shows a remarkable coincidence while the discrepancies offer a valuable diagnosis on the sputtering flux and phase composition. The proposed method allows a quick setup of the RF cosputtering system to control film composition providing a versatile tool to optimization of the process.
The combined effect on the variation of the in-situ deposition temperature and the variation of the applied power on the deposition rate (DR), gap energy (Eg), and resistivity (ρ) in barium strontium titanate thin films, deposited into RF (radio frequency)–magnetron cosputtering equipment, are presented in this research. The simultaneous action of two magnetrons (BaTiO3 and SrTiO3) is explained using the first and second derivative of Boltzmann’s sigmoidal equation. This found that a deposition gradient is a very novel analysis. Using the color-code lines built through MATLAB® and analyzing the trend information, taking into account the influence of the calculated “x” parameter, by means of the Boltzmann’s sigmoidal equation fit, we propose a method to set up an RF–magnetron cosputtering system to predict the DR(x,T), Eg(x,T), and ρ(x,T) values of BaxSr1−xTiO3 solid solutions with 0 ≤ x ≤ 1 for amorphous and crystalline phases. This method can be a versatile tool to optimize the deposition process with, or without, in situ deposition temperature.
Thin films (100-400 nm) of BaxSr1-xTiO3 (0≤x≤1) deposited in RF-magnetron co-sputtering equipment are presented in this research work. The change of deposition rate, gap energy, and resistivity as a function of temperature-applied power change in the growth parameters was studied through the ISO colour-code lines constructed with MATLAB:By analysing the trend information and take into account the influence of the calculated "x" parameter with the Boltzmann profile fitting is proposed a method to allow a controlled set up of the RFmagnetron co-sputtering system and predict the Eg and resistivity values in the BaxSr1-xTiO3 solid solution with 0≤x≤1 for amorphous and crystalline phases. Also, a versatile tool to optimise the deposition process and material properties.keywords: BaxSr1-xTiO3 films; boltzmann modelling; optical band gap; deposition rate; stoichiometric content Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted:
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