Ultra-flexible solution-processed organic field-effect transistors

Yi, Hyunjung; Payne, Marcia M.; Anthony, John E.; Podzorov, Vitaly

doi:10.1038/ncomms2263

Cited by 280 publications

(207 citation statements)

References 28 publications

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“…With no additional mechanical stress-release layers, the most flexible organic field-effect transistors based on a polycrystalline organic semiconducting layer could be bent without any degradation of their electrical performance to a radius as low as 260 mm (ref. 57). Although degradation of these devices based on bis-(triisopropylsilylethynyl) pentacene or bis-triethylsilylethynyl anthradithiophene thin films was observed below a critical bending radius of B200 mm, these results provided evidence that crystalline solution-processed organic semiconducting materials could be intrinsically more flexible than initially thought.…”

Section: Discussionmentioning

confidence: 77%

Non-volatile organic memory with sub-millimetre bending radius

et al. 2014

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High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p-and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-cotrifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of 46,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 mm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

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Section: Discussionmentioning

confidence: 77%

Non-volatile organic memory with sub-millimetre bending radius

et al. 2014

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“…Flexibility in thin film devices can be achieved by direct fabrication on plastic foil 16 , by peeling off a polymer layer spin coated on a rigid substrate 17 or by spalling the thin top layer from a crystalline silicon wafer after device fabrication 18 . Extremely small bending radii (o1 mm) can be achieved either by using materials with high mechanical strength [19][20][21] or by fabricating the electronics in the neutral strain position 22 .…”

mentioning

confidence: 99%

“…In addition to the two aforementioned strategies, a third very promising route consists in the use of ultrathin substrates 19,[23][24][25][26] . Besides the extreme bendability, this approach offers unique capabilities as lightness and conformability, which are important for smart-skin 24,27 , biological tissue sensing 28 and even solar cells 25 .…”

mentioning

confidence: 99%

Wafer-scale design of lightweight and transparent electronics that wraps around hairs

et al. 2014

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Electronics on very thin substrates have shown remarkable bendability, conformability and lightness, which are important attributes for biological tissues sensing, wearable or implantable devices. Here we propose a wafer-scale process scheme to realize ultra flexible, lightweight and transparent electronics on top of a 1-mm thick parylene film that is released from the carrier substrate after the dissolution in water of a polyvinyl-alcohol layer. The thin substrate ensures extreme flexibility, which is demonstrated by transistors that continue to work when wrapped around human hairs. In parallel, the use of amorphous oxide semiconductor and high-K dielectric enables the realization of analogue amplifiers operating at 12 V and above 1 MHz. Electronics can be transferred on any object, surface and on biological tissues like human skin and plant leaves. We foresee a potential application as smart contact lenses, covered with light, transparent and flexible devices, which could serve to monitor intraocular pressure for glaucoma disease.

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“…Organic thin-film transistors (OTFTs) have been an important research subject because they are indispensable elements in the development of low-cost, large-area electronics, such as paper-based displays, smart cards, radio-frequency ID tags, and sensors [1][2][3][4][5][6][7][8]. Among the fundamental components of OTFTs, namely the semiconductor, dielectric, and conductor, studies on the development and application of organic semiconducting materials have intensively been performed for the last few decades [9][10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors

Kim

2018

Coatings

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A ladder-type organosilicate copolymer based on trimethoxymethylsilane (MTMS) and 1,2-bis(triethoxysilyl)alkane (BTESn: n = 2-4) were synthesized for use as gate dielectrics in organic thin-film transistors (OTFTs). For the BTESn, the number of carbon chains (2-4) was varied to elucidate the relationship between the chemical structure of the monomer and the resulting dielectric properties. The developed copolymer films require a low curing temperature (≈150 • C) and exhibit good insulating properties (leakage current density of ≈10 −8 -10 −7 A·cm −2 at 1 MV·cm −1 ). Copolymer films were employed as dielectric materials for use in top-contact/bottom-gate organic thin-film transistors and the resulting devices exhibited decent electrical performance for both p-and n-channel organic semiconductors with mobility as high as 0.15 cm 2 ·V −1 ·s −1 and an I on /I off of >10 5 . Furthermore, dielectric films were used for the fabrication of TFTs on flexible substrates.

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Ultra-flexible solution-processed organic field-effect transistors

Cited by 280 publications

References 28 publications

Non-volatile organic memory with sub-millimetre bending radius

Non-volatile organic memory with sub-millimetre bending radius

Wafer-scale design of lightweight and transparent electronics that wraps around hairs

A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors

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