Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure

Dubinov, A. A.; Bylinkin, Andrei; Aleshkin, V. Ya.; Ryzhii, V.; Otsuji, T.; Svintsov, Dmitry

doi:10.1364/oe.24.029603

Cited by 12 publications

(8 citation statements)

References 39 publications

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“…Terahertz (0.3 -10 THz) systems have received a great deal of attention for applications in spectroscopy [1][2][3][4][5][6][7][8], imaging [5,[9][10][11][12][13][14], medicine [9,[15][16][17][18], material characterization [1,9,[19][20][21], security [22,23], and communication [24]. These applications require a compact, low cost and portable terahertz (THz) system to operate outside the laboratory environment, which is the goal of many recent works [25][26][27]. Among them, there is a growing interest in using photoconductive antennas (PCAs) as the most common approach for THz wave generation [28][29][30] and recent developments have been focused on PCAs operating in the telecom wavelength window [31][32][33][34][35][36][37][38][39][40][41]…”

Section: Introductionmentioning

confidence: 99%

Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation

Jooshesh¹,

Fesharaki²,

Bahrami-Yekta³

et al. 2017

Opt. Express

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Photocurrent generation in low-temperature-grown GaAs (LT-GaAs) has been significantly improved by growing a thin AlAs isolation layer between the LT-GaAs layer and semi-insulating (SI)-GaAs substrate. The AlAs layer allows greater arsenic incorporation into the LT-GaAs layer, prevents current diffusion into the GaAs substrate, and provides optical back-reflection that enhances below bandgap terahertz generation. Our plasmon-enhanced LT-GaAs/AlAs photoconductive antennas provide 4.5 THz bandwidth and 75 dB signal-to-noise ratio (SNR) under 50 mW of 1570 nm excitation, whereas the structure without the AlAs layer gives 3 THz bandwidth, 65 dB SNR for the same conditions.

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Section: Introductionmentioning

confidence: 99%

Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation

Jooshesh¹,

Fesharaki²,

Bahrami-Yekta³

et al. 2017

Opt. Express

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“…Note that, recently, THz QCLs lasing at 8 THz have been designed based on nonpolar (m-plane) GaN quantum wells [3]. It has also been proposed to use ZnO quantum wells [4] and graphene [5] as active media for QCLs in this frequency range due to the high optical phonon energies of these materials. Another advantage of graphene is an electron quasi-relativistic dispersion law, and, as a result, a large gain coefficient [5].…”

mentioning

confidence: 99%

Thin active region HgCdTe-based quantum cascade laser with quasi-relativistic dispersion law

Dubinov¹,

Ушаков²,

Афоненко³

et al. 2022

Opt. Lett.

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HgCdTe is promising as a material to solve a problem of the development of semiconductor sources with an operational frequency range of 6–10 THz due to the small optical phonon energies and electron effective mass. In this study, we calculate the dependence of the metal–metal waveguide characteristics on the number of cascades for the 3-well design HgCdTe-based quantum cascade laser at 8.3 THz. It is shown that four cascades are sufficient for lasing at a lattice temperature of 80 K due to the large gain in the active medium. The results of this study provide a way to simplify the fabrication of thin active region HgCdTe-based quantum cascade lasers for operation in the range of the GaAs phonon Reststrahlen band inaccessible to existing quantum cascade lasers.

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“…The latter enables to reach 90% of absorption from 0.2 to 0.7 THz for a 10 mm-long waveguide. Besides, V. Ryzhii et al have investigated graphene multilayers integrated in metal slot-line waveguides, dielectric waveguides [8] and surface plasmonic metal waveguides [9]; they demonstrated the high potential of these components for THz lasing at room temperature.Here, we propose hybrid metal-dielectric waveguides coupled to 2D materials deposited on top that are easy to fabricate and provide strong light-matter interaction at THz frequencies. The structure of the hybrid metal-dielectric waveguides is depicted in Fig.1.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

2D Materials Coupled to Hybrid Metal-Dielectric Waveguides for THz Technology

Huang

Massabeau

Tignon

et al. 2018

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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In this letter, we propose hybrid metal-dielectric waveguides coupled to 2D materials that provide strong light-matter interaction at THz frequencies. We investigate the properties of the fundamental propagating modes and show that the strength of in-plane electric field components is maximized at the top of the dielectric strip on which the 2D material is deposited. Our simulation predicts 100 % modulation of THz light by tuning the Fermi level of a graphene sheet deposited onto a 1mm-long waveguide. We also show the potential of graphene multilayers coupled to these waveguides for achieving lasing at THz frequency. Our approach is compatible with CMOS or THz quantum cascade laser technologies.Graphene and other 2D layered materials such as black phosphorus and TMCD have attracted increasing attention for THz technology due to their unusual electrical and optical properties [1]. For instance, graphene can absorb THz photons, displays high electron mobility at room temperature, high optical nonlinearities [2] and tunable carrier densities. Likewise, black phosphorus is well suited for detection of THz radiation owing to its finite and direct bandgap, which provides high Ion/Ioff ratio, its huge carrier density tunability and large mobilities [3]. Also, efficient THz modulation has been demonstrated on MoS2 on silicon substrate under optical excitation [4]. Moreover, the individual atomic planes of 2D materials can be mechanically separated from the bulk crystal and placed onto arbitrary substrates. As a result, 2D materials, which can realize many functions required for THz photonic circuits (e.g., modulation and detection of photons), can be easily integrated with other components based on silicon technologies or THz quantum cascade laser technologies. However, the inherent thinness of 2D materials severely limits their interaction with normal incident light.In recent years, several strategies have been proposed to enhance the interaction between THz optical field and the 2D material. One approach is to integrate 2D materials with photonic structures or into optical cavities. G. Liang et al. demonstrate 100 % absorption of the THz light by a graphene sheet incorporated into the cavity of a quantum cascade laser albeit with a bandwidth limited to the linewidth of the cavity resonance [5]. Alternatively, 2D materials have been integrated with optical waveguides to enhance the light-matter interaction in a nonresonant manner. Locatelli et al. [6] and M. Mittendorff et al. [7] propose advanced dielectric waveguiding structures based on a coupler with a graphene sheet between two waveguides and a graphene layer in a middle of a silicon waveguide, respectively. The latter enables to reach 90% of absorption from 0.2 to 0.7 THz for a 10 mm-long waveguide. Besides, V. Ryzhii et al. have investigated graphene multilayers integrated in metal slot-line waveguides, dielectric waveguides [8] and surface plasmonic metal waveguides [9]; they demonstrated the high potential of these components for THz lasing at room temperature...

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Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure

Cited by 12 publications

References 39 publications

Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation

Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation

Thin active region HgCdTe-based quantum cascade laser with quasi-relativistic dispersion law

2D Materials Coupled to Hybrid Metal-Dielectric Waveguides for THz Technology

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