Über Wachstum und Epitaxie von CdSe durch Sublimation und chemische Transportreaktionen

Kleber, W.; Mietz, I.; Elsasser, U.

doi:10.1002/crat.19670020304

Cited by 17 publications

(6 citation statements)

References 7 publications

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“…Next easiest of those now available should be Zn+O and Cd+O, 3 for the van der Waals term is negligible when the donor is O. However, an accurate determination of the dielectric constant requires the fitting of close DA pairs, and a problem with multipole moments also arises for close pairs (m< 10).…”

Section: Fitting Other Da Spectramentioning

confidence: 99%

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Dielectric Constant of GaP at 1.6°K

Patrick

Dean²

1969

Phys. Rev.

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188viated from the theoretical predictions, particularly at high fields.(2) Three distinctive regions are observed from the iV-versus-G plot: region I, I 8^G , (r=r n o); region II, J s ocG 5/4 , (rocAn~1 12 ), and region III, I 8 ccG r , (r= 2-2.5), (TCCA»-* 0= 1-1.5).(3) The PME open-circuit voltage is found to decrease with increasing temperature as well as with decreasing photoinjection.(4) The relative photoconductance G/Go has a maximum value around 20 °K and decreases with either increase or decrease in temperatures.(5) The PME apparent lifetime r is decreased with increasing photoinjection and reaches a constant value r n o at very-high-injection levels.(6) The high-injection electron lifetime r"o is found to decrease with decreasing temperature, indicating that the electron-capture cross section is increased with decreasing temperature.(7) The effect of trapping in regions I and II and for r>20°K can be completely ignored, and the assumption that A n = Ap for these two regions is experimentally verified.(8) The effective carrier mobility is found to decrease with increasing photoinjection, which can be attributed to the increase in the ionized impurity scattering as the photoinjection is increased.In addition, the flaw level is believed to be acceptortype and located in the lower half of the band gap.A comparison of observed and calculated line positions in a donor-acceptor pair spectrum yields a value of €(0) = 10.75±0.1 for the GaP static dielectric constant at 1.6°K. Earlier analyses of pair spectra assumed e (0) = 11.1, the value obtained from Raman-scattering measurements at 300°K. The new value of e(0) necessitates a small revision in the ionization energies of some donors and acceptors.

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Section: Fitting Other Da Spectramentioning

confidence: 99%

“…( 3) The PME open-circuit voltage is found to decrease with increasing temperature as well as with decreasing photoinjection.…”

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confidence: 94%

Dielectric Constant of GaP at 1.6°K

Patrick

Dean²

1969

Phys. Rev.

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“…Si, [77] Ge, [78] GaP, [79] GaAs, [79][80][81] Ga 1-x In x As, [82] GaSb, [83] InP, [84] ZnS, [85,86] ZnSe, [85][86][87][88] ZnTe, [89,86,90] CdSe, [91] Cd 1-x Zn x S/GaAs, [92] Hg 1-x Cd x Te, [93][94][95][96] and CuInSe 2 [97] A comprehensive survey of the formation of thin layers via deposition from the gas phase (CVD and CVT methods) with over 400 quotes from literature is given by Choy. [98] Currently, there are signs of novel applications for chemical vapor transport REVIEW reactions in the processing of raw materials.…”

Section: Applicationsmentioning

confidence: 99%

Chemical Vapor Transport Reactions – Arguments for Choosing a Suitable Transport Agent

Binnewies

Schmidt

2017

Zeitschrift anorg allge chemie

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Abstract.A variety of processes of crystal growth proceeds via the gas phase. If the initial solid material is volatilized in a heterogeneous reaction under presence of a gaseous reactant, the transport agent, the term Chemical Vapor Transport Reaction (CVT) is applied. Crystallization processes by CVT are known for both elements, intermetallics, binary and complex oxides, halides, chalcogenides, and pnictides. Even if the formation of volatile halides is a common feature of almost

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“…The solution of the system of equations (4), ( 5 ) , (7), and (8) gives mathematical expressions for the partial pressures of Cd and Se expressed by the equilibrium constants K, and K 2 . These expressions are deduced in the work of Kotelyanskii [ l l ] for the CdS-H, system, where corresponding equilibrium dissociation constants exist for CdS and H,S.…”

Section: Thermodynamic Analysismentioning

confidence: 99%

“…Recently the interest in the heteroepitaxial growth of CdSe from the vapour phase has increased. The techniques used for obtaining the CdSe heteroepitaxial layers are hydrogen transport [l to 61, iodine transport [7], sublimation [7, 81, or reaction of Cd-metal-organic compounds with H,Se [9]. This paper describes the preparation of epitaxial layers of CdSe on synthetic mica (fluorflogopite KMg3[Si,A10,,,]F,), (0001) sapphire, and (111) Ge, using the hydrogen gas transport method.…”

Section: Introductionmentioning

confidence: 99%

Preparation of CdSe epitaxial layers by the vapour transport method

Ratcheva-Stambolieva

Dragieva

Djoglev

et al. 1974

Phys. Stat. Sol. (a)

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Hetero‐epitaxial growth of CdSe on artificial mica (fluorflogopit, KMg3[Si3AlO10]F2), on (0001) sapphire and (111) Ge substrates has been investigated using the H2–CdSe vapour growth technique. The partial pressures of cadmium and selenium in the gas phase has been calculated for the different temperatures. The transport rate of the CdSe source and the growth rate of the epitaxial layers are theoretically and experimentally defined. A comparison between the experimental results and the thermodynamic model has been made. The structure and morphology of the layer surfaces are investigated.

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Über Wachstum und Epitaxie von CdSe durch Sublimation und chemische Transportreaktionen

Abstract: Epitaxial growh alu, revealed the hexagonal modification only.

Cited by 17 publications

References 7 publications

Dielectric Constant of GaP at 1.6°K

Dielectric Constant of GaP at 1.6°K

Chemical Vapor Transport Reactions – Arguments for Choosing a Suitable Transport Agent

Preparation of CdSe epitaxial layers by the vapour transport method

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