Two-Terminal Devices in Millimeter-Wave Range: Physical Analysis and Future Trends

Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique

“…To reduce the current which is desirable to achieve the continuous wave (CW) mode operation we introduce a p-layer close to the cathode contact. This layer has been used in so-called double-camel devices and TEDs [10][11][12][13][14]. Because the p-layer creates a very high field near the cathode we used wurtzite GaN for the planar doped barrier TED to avoid electron-hole pair multiplication due to impact ionization.…”

“…The generation current limitation is one of the most critical problems for the GaAs and InP TED design [10]. To overcome the limitation, different approaches have been taken, including the use of low-doped regions near the cathode contact (notching), planar doped barriers, camel diodes, heterojunction lounchers, and tunnel injection [10][11][12][13][14]. Our preliminary simulations of n + -n-n + GaN TEDs show very high average current and hence high dissipated power density during operation.…”

“…From one point of view, such a high threshold can result in high microwave power generation; from another point of view, it leads to a high dissipated power in the active region of the device. The generation current limitation is one of the most critical problems for the GaAs and InP TED design [10]. To overcome the limitation, different approaches have been taken, including the use of low-doped regions near the cathode contact (notching), planar doped barriers, camel diodes, heterojunction lounchers, and tunnel injection [10][11][12][13][14].…”