Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique

Gruz̆inskis, V.; Shiktorov, P.; Starikov, E.; Zhao, J.H.

doi:10.1088/0268-1242/16/9/311

Cited by 33 publications

(11 citation statements)

References 22 publications

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“…GaN-based diodes with a length of the active region of $ 1 lm have been predicted to provide oscillation frequencies for the fundamental harmonic as high as 200-400 GHz, [6][7][8][9][10] because of its higher saturation velocity with respect to conventional GaAs and InP structures (v sat_GaN % 1.43 Â 10 7 cm/s, v sat_GaAs % 0.9 Â 10 7 cm/s and v sat_InP % 1.16 Â 10 7 cm/s). Potentially, GaN allows increasing the microwave power generation because its threshold electric field is very high: $200 kV/cm for the Wurzite phase.…”

Section: Introductionmentioning

confidence: 99%

Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

Garcia

Pérez

Íñiguez-de-la-Torre

et al. 2014

Journal of Applied Physics

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In this work, we report on Monte Carlo simulations to study the capability to generate Gunn oscillations of diodes based on InP and GaN with around 1 lm active region length. We compare the power spectral density of current sequences in diodes with and without notch for different lengths and two doping profiles. It is found that InP structures provide 400 GHz current oscillations for the fundamental harmonic in structures without notch and around 140 GHz in notched diodes. On the other hand, GaN diodes can operate up to 300 GHz for the fundamental harmonic, and when the notch is effective, a larger number of harmonics, reaching the Terahertz range, with higher spectral purity than in InP diodes are generated. Therefore, GaN-based diodes offer a high power alternative for sub-millimeter wave Gunn oscillations. V

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Section: Introductionmentioning

confidence: 99%

Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

Garcia

Pérez

Íñiguez-de-la-Torre

et al. 2014

Journal of Applied Physics

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“…The performance of Gunn diode is very sensitive to Ohmic contact resistance that has been viewed in other works. 13 Our simulation also discusses the characteristics by changing c from 1 ϫ 10 −6 to 2.5ϫ 10 −5 ⍀ cm 2 . The simulation results given in Fig.…”

Section: Fig 1 Schedule Of Ganmentioning

confidence: 95%

Use of AlGaN in the notch region of GaN Gunn diodes

Yang

Hao

Zhang

2009

Applied Physics Letters

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The wurtzite gallium nitride (GaN) Gunn diodes with aluminum gallium nitride (AlGaN) as launcher in the notch region are investigated by negative-differential-mobility model based simulation. Under the operation of self-excitation oscillation with dipole domain mode, the simulations show that the diode with two-step-graded AlGaN launcher structure can yield the maximal rf power of 1.95 W and dc/rf conversion efficiency of 1.72% at the fundamental oscillation frequency of around 215 GHz. This kind of Gunn diode structure without the low doping process is convenient for accurately controlling the dopant concentration of GaN epitaxial growth.

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“…An amplification of SCW in GaN films should be realized in a pulse regime (of a duration < 1 μs), because of heating the GaN film. We do not consider here the frequency range f > 200 GHz, because an applicability of hydrodynamic equations for the electron fluid is doubtful there [6].…”

Section: Amplification Of Space Charge Waves In a Thin Gan Filmmentioning

confidence: 99%

“…Also, the frequency range of amplification of SCW in GaAs films is f < 50 GHz. To excite the powerful hypersonic AW at higher frequencies f > 50 GHz, it is rather better to use new materials possessing negative differential conductivity at higher frequencies f = 100-500 GHz, like gallium nitride GaN [4][5][6][7]. The attracting properties of GaN are: 1) a high critical bias field E c~1 00 kV/cm; 2) extended frequency range for observing NDC f ≤ 500 GHz; 3) high values of piezoelectric constants.…”

Section: Introductionmentioning

confidence: 99%

Excitation of Hypersound due to Coupling with Space Charge Waves of Millimeter Wave Range in Gan Films

Grimalsky

Koshevaya

Gaggero-S.

et al. 2008

J Infrared Milli Terahz Waves

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The excitation of hypersonic waves (f = 30-200 GHz) due to coupling with amplified space charge waves of millimeter wave range in GaN films is investigated theoretically. An amplification of space charge waves due to the negative differential conductivity in GaN films placed onto a semi-infinite substrate is considered and possible spatial increments are calculated. Both diffusion-drift equations for volume electron concentration and also an approximation of two-dimensional electron gas were used jointly with the Poisson equation for the electric field. The amplified space charge waves can excite hypersonic waves in the substrate at the same frequency due to piezoeffect and deformation potential mechanisms. It is demonstrated that the piezoeffect seems very effective for resonant excitation of hypersonic waves in the case of a full mechanic contact of GaN film and a non-piezoelectic substrate.

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Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique

Cited by 33 publications

References 22 publications

Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

Use of AlGaN in the notch region of GaN Gunn diodes

Excitation of Hypersound due to Coupling with Space Charge Waves of Millimeter Wave Range in Gan Films

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