An analysis and investigation of noises of GaAs tunnel diodes, which abrupt p+-n+ profile was obtained by using amphoteric nature of silicon, were performed. The main scope of this work was to verify the concepts of the explanation of white noise characteristics on the ground of shot noise and on the ground of the Gupta theorem of thermal noise in resistive elements. The other scope was to investigate the peculiarities of low frequency noise in p+-n+ junctions formed by using amphoteric silicon nature.