Features of a tunnel diode oscillator at different temperatures

Al-Harthi, S. H.; Sellai, A.

doi:10.1016/j.mejo.2007.07.085

Cited by 6 publications

(6 citation statements)

References 8 publications

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“…).-Temperature dependent electrical characterization (See Figures 10a-10c) of CZTS-TiO 2 tunnel diode was performed in order to better understand the space charge activity and tunneling mechanism. [54][55][56][57][58][59] Peak and valley currents were observed to increase when the temperature was increased. Both peak and valley current positions shift toward higher voltage bias when the temperature was increased.…”

Section: Temperature Dependent Electrical Characterization (T-nta/t-n...mentioning

confidence: 99%

“…A shift of resonance toward a lower potential, when the temperature decreases, can be attributed to lowering of external circuit series resistance. [54][55][56][57][58][59] It is believed that PVCR diminishes mainly due to an increase in valley current at a much faster rate than the peak current increases with an increase in temperature. An effect of inelastic scattering, primarily caused by phonons and scattering at the interface, is more prominent at higher temperatures.…”

Section: Series Connection Of Two Tunnel Diodes (T-nta/t-np/ Cztsmentioning

confidence: 99%

“…To examine the contribution of the thermal activated transport, the Arrhenius equation was utilized in both ohmic and NDR regions. 54 Figure 10a shows a log (resistance) vs. inverse temperature plot for tunnel diode under dark conditions. Discontinued linearity is visible on the Arrhenius plot.…”

Section: Series Connection Of Two Tunnel Diodes (T-nta/t-np/ Cztsmentioning

confidence: 99%

“…[60][61][62] In the case of polaronic transport, charge flow is controlled by small polarons hopping (SPH) motion up to a certain temperature, after which, non-linear behavior is observed. Experimental activation energy (in a wide temperature range) can be estimated using following equation: 54 …”

Section: Series Connection Of Two Tunnel Diodes (T-nta/t-np/ Cztsmentioning

confidence: 99%

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Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

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Section: Temperature Dependent Electrical Characterization (T-nta/t-n...mentioning

confidence: 99%

Section: Series Connection Of Two Tunnel Diodes (T-nta/t-np/ Cztsmentioning

confidence: 99%

Section: Series Connection Of Two Tunnel Diodes (T-nta/t-np/ Cztsmentioning

confidence: 99%

Section: Series Connection Of Two Tunnel Diodes (T-nta/t-np/ Cztsmentioning

confidence: 99%

See 2 more Smart Citations

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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“…One is with the exact equation of the nonlinear behavior of the tunnel diode characteristics and another way is to use the piecewise approximation of this nonlinear behavior of the TD. In first case the total current the tunnel diode consists of three different components, viz., the tunneling current I t , an excess current I x and the thermal current I th [9]. The complete static current-voltage characteristic of the tunnel diode can be derived from KCL applied to node 1 in Fig.…”

Section: A Formal Verification Of Tdo With Checkmatementioning

confidence: 99%

Formal verification of Tunnel Diode Oscillator with temperature variations

Jamadagni¹

2010

2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC)

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In this paper, we propose an extension to the formal verification approach of hybrid systems to verify the Tunnel Diode Oscillator (TDO) with temperature variations. This enables the same platform that is used for validating the hybrid system, to be also used to formally verify the Tunnel Diode Oscillator with temperature variations. The proposed approach utilizes the simulation traces from the actual implementation of the analog circuits to carry out the formal analysis and verification. We demonstrate our approach around Checkmate [1] and Tunnel diode Oscillator (TDO) as a case study. Current-Voltage simulations were performed on a tunnel diode and the basic feature of the I-V characteristics were analyzed in the temperature range 100-300K. TDO is designed and validated based on these characteristics. In particular, TDO has been verified formally for the continuous range of initial conditions at this temperature range.

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