Two-layer Hall effect model for intermediate band Ti-implanted silicon

Olea, J.; González-Dı́az, G.; Pastor, David; Mártil, I.; Martı́, Antonio; Antolín, E.; Ĺuque, A.

doi:10.1063/1.3561374

Cited by 44 publications

(46 citation statements)

References 21 publications

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“…We fit the data to a model of bilayer transport behavior previously developed [19,20] that takes into account the transport parameters of the implanted layer, the substrate parameters and an energy barrier that limits the current between the upper (implanted) layer and the substrate. The data in Fig.…”

Section: Iii-resultsmentioning

confidence: 99%

“…Consequently the carrier concentration remains also constant regarding cristallinity. In Ref [19] and [20] we compare the carrier density for samples at Ti doses, of 10 15 , 5x10 15 and 10 16 cm -2 , and this showed a perfect correlation between the doses and carrier concentration. This was so in spite of the very different crystallinity of the samples, which goes from almost perfect crystal (with scarce defects) at 10 15 cm -2 to a defective film at 10 16 cm -2 dose.…”

Section: Iv-discussionmentioning

confidence: 99%

“…In Ref [19] and [20], we attribute the decoupling effect to a difference between the Fermi level and the conduction band both in the implanted layer and in the substrate. The big variations in DE and in G0 as the annealing energy density changes can´t be associated to Fermi level displacements, and are probably more related to a limitation produced by a loss of crystallinity or to a high metal density (but lower than Mott limit) in the boundary between the implanted layer and the substrate.…”

Section: Iv-discussionmentioning

confidence: 99%

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Meyer Neldel rule application to silicon supersaturated with transition metals

García-Hemme

García-Hernansanz

Olea

et al. 2015

J. Phys. D: Appl. Phys.

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This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser melting. The transverse conductance is exponentially activated, obtaining values ranging from 0.018 to 0.7 eV for the activation energy and pre-exponential factors of 10 -2 -10 12 S depending on the annealing energy density. A semi-logarithmic plot of the pre-exponential factor versus activation energy shows an almost perfect linear behavior as stated by the Meyer Neldel rule. The Meyer Neldel energy obtained for implantation with different transition metals and also annealed in different conditions is 22meV, which is within the range of silicon phonons, thus confirming the hypothesis of the Multi Excitation Entropy theory.

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Section: Iii-resultsmentioning

confidence: 99%

Section: Iv-discussionmentioning

confidence: 99%

Section: Iv-discussionmentioning

confidence: 99%

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Meyer Neldel rule application to silicon supersaturated with transition metals

García-Hemme

García-Hernansanz

Olea

et al. 2015

J. Phys. D: Appl. Phys.

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“…This fact is more pronounced at room temperature (280 K). That can be explained in terms of the model proposed by Olea et al 15 There are two types of charges: negative charge due to electrons at the conduction band and positive charge due to holes at the intermediate band that begins to be formed in the under Mott samples. In consequence, the implanted substrate shows a hybrid behavior of n-type and p-type (due to IB) substrate at the same time.…”

Section: -4mentioning

confidence: 99%

“…To summarize the admittance results, we can say that recombinant Ti deep levels trend to be located at deeper energy when the implantation dose increases, but keeping constant its concentration. In a previous work, Olea et al 15 proposed for OM sample an analytical two-layer model, in which the implanted layer and the substrate behave as an IB/n-Si type junction. They also deduce that the IB is located at 0.38 eV below the conduction band and carriers at the IB behave as holes with a mobility of 0.4-0.6 cm 2 V À1 s À1 .…”

Section: B Admittance Spectroscopymentioning

confidence: 99%

Experimental verification of intermediate band formation on titanium-implanted silicon

Castán¹,

Perez²,

García³

et al. 2013

Journal of Applied Physics

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Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28 eV below the conduction band for implantation doses in the range 10 13 -10 14 at./cm 2 . For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n þ /n junction. V C 2013 American Institute of Physics. [http://dx

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Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide

Algaidy,

Caudevilla,

Godoy‐Pérez

et al. 2024

Physica Status Solidi (a)

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Herein, a detailed investigation on the properties of supersaturated gallium arsenide (GaAs) using Ti+ implantation followed by nanosecond pulsed laser melting (PLM) is presented. The supersaturated samples are analyzed by means of electrical, optical, and optoelectronic characterization. The sheet resistance results obtained using van der Pauw configuration measurements do not show activation of the implanted Ti+ in semi‐insulating GaAs after PLM. Absorptance measurements show a sub‐bandgap absorption (up to 6.5% for λ = 1000 nm) of the supersaturated GaAs:Ti and the just PLM‐processed GaAs, with the same laser melting fluence used (0.50 J/cm−2). The origin of this sub‐bandgap absorption is analyzed. Optoelectronic measurements show a similar sub‐bandgap photo‐response related to the absorption analyzed. The photo‐response measured below the bandgap originates from point defects introduced by the PLM process.

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Two-layer Hall effect model for intermediate band Ti-implanted silicon

Cited by 44 publications

References 21 publications

Meyer Neldel rule application to silicon supersaturated with transition metals

Meyer Neldel rule application to silicon supersaturated with transition metals

Experimental verification of intermediate band formation on titanium-implanted silicon

Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide

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