Meyer Neldel rule application to silicon supersaturated with transition metals

García-Hemme, E.; García-Hernansanz, R.; Olea, J.; Pastor, David; Prado, A. del; Mártil, I.; González-Dı́az, G.

doi:10.1088/0022-3727/48/7/075102

Cited by 8 publications

(5 citation statements)

References 28 publications

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“…The measured mobility is electron-dominated for the whole range of temperatures (20-300 K). These results are in good agreement with previously reported results of similar hyperdoped structures, such as Si:Ti [21] and Si with other transition metals (Cr, V) [25]. If we apply the model described in 2.4 with F = 1 in the region where the layers are totally coupled, we can extract the values of the sheet conductance of the hyperdoped layer, which is shown in figure 6, just by subtracting the sheet conductance of the substrate to the measured value.…”

Section: Electrical Resultssupporting

confidence: 93%

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Electrical transport properties in Ge hyperdoped with Te

Caudevilla¹,

Algaidy²,

Pérez‐Zenteno³

et al. 2022

Semicond. Sci. Technol.

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In this work we have successfully hyperdoped germanium with tellurium with a concentration peak of 1021 cm−3. The resulting hyperdoped layers show good crystallinity and sub-bandgap absorption at room temperature which makes the material a good candidate for a new era of Complementary Metal-Oxide-Semiconductor (CMOS)-compatible short-wavelength-infrared (SWIR) photodetectors. We obtained absorption coefficients α higher than 4.1×103 at least up to 3 μm. In this study we report the temperature-dependency electrical properties of the hyperdoped layer measured in van der Pauw configuration. The electrical behaviour of this hyperdoped material can be explained with an electrical bilayer coupling/decoupling model and the values for the isolated hyperdoped layer are a resistivity of 4.25×10−3 Ω·cm with an electron-mobility around -100 cm2V−1s−1.

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Section: Electrical Resultssupporting

confidence: 93%

Section: Electrical Resultssupporting

confidence: 93%

Electrical transport properties in Ge hyperdoped with Te

Caudevilla¹,

Algaidy²,

Pérez‐Zenteno³

et al. 2022

Semicond. Sci. Technol.

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“…The MN rule has been found for other electrical properties as the conductivity or for diffusion measurements. For instance, it has been reported for the conductance of a bilayer obtaining supersaturating a Si wafer with some metals as vanadium, zirconium, titanium or chromium, 25 and a value for the MN energy of 22 meV was found. Coutts and Pearsall found a MN energy of 31 meV for the reverse current of solar cells.…”

Section: Resultsmentioning

confidence: 99%

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

García

Castán

Dueñas

et al. 2018

Journal of Elec Materi

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Intermediate band in semiconductors have attracted much attention for their use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates were implanted with very high doses (10 13 and 10 14 cm -2 ) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not overtaken. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We have found a single deep center at an energy of E C -250 meV or E C -200 meV depending on the dose. This value agrees with one of the levels found for vanadium in silicon. The capture cross section values of the deep levels were also calculated, and we found a relationship between the capture cross section and the energy position of the deep levels which follows the Meyer-Neldel rule. This process usually appears in processes involving multiple excitations.The Meyer-Neldel energy values agrees with the ones previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.

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“…The high values of the sheet resistance point to a blocking mechanism between the PLM‐processed layer and the untreated substrate, since a parallel conduction would result in a sheet resistance lower than any of the layers (shown also in Figure A). This mechanism that blocks transversal conduction may be related to the formation of a potential barrier between the crystalline GaP substrate and the poorly crystallized surface layer after PLM . This potential barrier would be produced by the interface defects.…”

Section: Discussionmentioning

confidence: 99%

Strong subbandgap photoconductivity in GaP implanted with Ti

Olea

Prado

García-Hemme

et al. 2017

Progress in Photovoltaics

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Photovoltaic solar cells based on the intermediate band (IB) concept could greatly enhance the efficiency of future devices. We have analyzed the electrical and photoconductivity properties of GaP supersaturated with Ti to assess its suitability for IB solar cells. GaP:Ti was obtained by ion implantation followed by pulsed-laser melting (PLM) using an ArF excimer laser. It was found that PLM energy densities between 0.35 and 0.55 J/cm 2 produced a good recovery of the crystalline structure of GaP (both unimplanted and implanted with Ti), as evidenced by high mobility measured values (close to the reference GaP). Outside this energy density window, the PLM failed to recover the crystalline structure producing a low mobility layer that is electrically isolated from the substrate. Spectral photoconductivity measurements were performed by using the van der Pauw set up. For GaP:Ti a significant enhancement of the conductivity was observed when illuminating the sample with photon energies below 2.26 eV, suggesting that this photoconductivity is related to the presence of Ti in a concentration high enough to form an IB within the GaP bandgap. The position of the IB was estimated to be around 1.1 eV from the conduction band or the valence band of GaP, which would lead to maximum theoretical efficiencies of 25% to 35% for a selective absorption coefficients scenario and higher for an overlapping scenario.

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Meyer Neldel rule application to silicon supersaturated with transition metals

Cited by 8 publications

References 28 publications

Electrical transport properties in Ge hyperdoped with Te

Electrical transport properties in Ge hyperdoped with Te

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

Strong subbandgap photoconductivity in GaP implanted with Ti

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