Two interferometric methods for the mechanical characterization of thin films by bulging tests. Application to single crystal of silicon

Bonnotte, Éric; Delobelle, P.; Bornier, L.; Trolard, Bertrand; Tribillon, G.

doi:10.1557/jmr.1997.0299

Cited by 59 publications

(20 citation statements)

References 15 publications

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“…The deflection of the membrane's center (z) is recorded, and material properties are extracted from the pressure-deflection curve, p ¼ f(z). This method has been successfully used to study the properties of silicon, [19] silicon nitride, [20] metallic [21,22] and hard polymer [23,24] thin films, as well as complex multilayer structures. [25] Unlike the hard materials normally characterized by bulge tests, soft (Y % 1 MPa) PDMS membranes exhibit large deformations when submitted to a pressure.…”

Section: Bulge Test Equationsmentioning

confidence: 99%

Metal Ion Implantation for the Fabrication of Stretchable Electrodes on Elastomers

Rosset

Niklaus

Dubois

et al. 2009

Adv Funct Materials

186

198

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Here, the use of low‐energy metal ion implantation by filtered cathodic vacuum arc to create highly deformable electrodes on polydimethylsiloxane (PDMS) membranes is reported. Implantation leads to the creation of nanometer‐size clusters in the first 50 nm below the surface. When the elastomer is stretched, these small clusters can move relative to one another, maintaining electrical conduction at strains of up to 175%. Sheet resistance versus ion dose, resistance versus strain, time stability of the resistance, and the impact of implantation on the elastomer's Young's modulus are investigated for gold, palladium, and titanium implantations. Of the three tested metals, gold has the best performance, combining low and stable surface resistance, very high strain capabilities before loss of electrical conduction, and low impact on the Young's modulus of the PDMS membrane. These electrodes are cyclically strained to 30% for more than 105 cycles and remain conductive. In contrast, sputtered or evaporate metals films cease to conduct at strains of order 3%. Additionally, metal ion implantation allows for creating semi‐transparent electrodes. The optical transmission through 25‐µm‐thick PDMS membranes decreases from 90% to 60% for Pd implantations at doses used to make stretchable electrodes. The implantation technique presented here allows the rapid production of reliable stretchable electrodes for a number of applications, including dielectric elastomer actuators and foldable or rollable electronics.

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Section: Bulge Test Equationsmentioning

confidence: 99%

Metal Ion Implantation for the Fabrication of Stretchable Electrodes on Elastomers

Rosset

Niklaus

Dubois

et al. 2009

Adv Funct Materials

186

198

View full text Add to dashboard Cite

show abstract

“…Additionally, correction factors were also proposed for rectangular membranes. 20 Some values of C 0 , C 1 , and C 2 found in the literature are reported in Table I.…”

Section: A Deflection Of Circular Membranes Under Pressurementioning

confidence: 99%

Comparison of two experimental methods for the mechanical characterization of thin or thick films from the study of micromachined circular diaphragms

Malhaire

2012

Review of Scientific Instruments

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The purpose of this study was to compare two experimental methods and evaluate the effectiveness of a set of analytical models in order to measure the initial stress and the Young's modulus value of thin and thick film materials. Two types of experiments were performed on micromachined circular diaphragms: bulge testing and vibrometry. The range of validity and accuracy of the analytical models with respect to the vibration of the diaphragms was discussed from the finite element simulations. It was shown that the a/t ratio should be considered carefully to determine the value of the Young's modulus by vibrometry with an acceptable error. A relative error of approximately ±10% on E was obtained for a/t ≤ 750. For 750 ≤ a/t ≤ 1000, the value of the dimensionless parameter k must also be considered. It has been shown that the residual stress value can be obtained with an accuracy of 10% or less, given that k > 12. As an illustration, experimental methods and models were applied to the characterization of a thick electroplated gold film and a sputter-deposited Inconel thin film. Circular structures were defined by vertical sidewalls etched on the back of a Si wafer using the deep reactive ion etching technique. In addition to analytical models, parametric finite element simulations and a design optimization technique were used to determine the material's mechanical properties. The static deflections of the diaphragms were measured as a function of the applied pressure. The resonant frequencies and mode shapes of the vibrating structures were observed under vacuum by white-light interferometric microscopy. For gold, it was found that E = (53 ± 20) GPa and σ0 = (180 ± 10) MPa. For Inconel, it was found that E = (157 ± 14) GPa and σ0 = (172 ± 5) MPa.

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“…If the deflection is small compared to the size of the membrane, the membrane deflection can be linked to the pressure difference P D ¼ P ext À P between the two sides of the membrane. Using the analytical model of Bonnotte, 25 and assuming zero residual stress in the membrane, this difference is expressed as follows:…”

Section: Leak Rate Characterizationmentioning

confidence: 99%

Low-temperature indium-bonded alkali vapor cell for chip-scale atomic clocks

Straessle

Pellaton

Affolderbach

et al. 2013

Journal of Applied Physics

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A low-temperature sealing technique for micro-fabricated alkali vapor cells for chip-scale atomic clock applications is developed and evaluated. A thin-film indium bonding technique was used for sealing the cells at temperatures of 140 C. These sealing temperatures are much lower than those reported for other approaches, and make the technique highly interesting for future micro-fabricated cells, using anti-relaxation wall coatings. Optical and microwave spectroscopy performed on first indium-bonded cells without wall coatings are used to evaluate the cleanliness of the process as well as a potential leak rate of the cells. Both measurements confirm a stable pressure inside the cell and therefore an excellent hermeticity of the indium bonding. The double-resonance measurements performed over several months show an upper limit for the leak rate of 1.5 Â 10 À13 mbarÁl/s. This is in agreement with additional leak-rate measurements using a membrane deflection method on indium-bonded test structures.

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Two interferometric methods for the mechanical characterization of thin films by bulging tests. Application to single crystal of silicon

Cited by 59 publications

References 15 publications

Metal Ion Implantation for the Fabrication of Stretchable Electrodes on Elastomers

Metal Ion Implantation for the Fabrication of Stretchable Electrodes on Elastomers

Comparison of two experimental methods for the mechanical characterization of thin or thick films from the study of micromachined circular diaphragms

Low-temperature indium-bonded alkali vapor cell for chip-scale atomic clocks

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