Two-inch a-plane (11-20) 6H-SiC Crystal Grown by Using the PVT Method from a Small Rectangular Substrate

Yeo, Im-Gyu; Yang, Woo-Sung; Park, Jong-Hwi; Ryu, Heui-Bum; Lee, Won–Jae; Shin, Byoungchul; Nishino, Seiji

doi:10.3938/jkps.58.1541

Cited by 7 publications

(3 citation statements)

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“…The morphology of etched SiC nanopillars on 6H-SiC (11-20) substrate shows an asymmetric pillar shape (Fig. 1d The 6H-SiC (11-20) substrate used in this study is slightly misoriented during the growth process [6]. Therefore, the SiC pillars on 6H-SiC (11-20) were also tilted at an angle of misorientation after the etching.…”

Section: Resultsmentioning

confidence: 94%

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Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars

Choi

Latu-Romain

Bano³

et al. 2013

MSF

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A comprehensive study on different polytypes (α-SiC and β-SiC) and crystal orientations ((0001) and (11-20) of 6H-SiC) has been investigated in order to elaborate Silicon carbide (SiC) nanopillar using inductively coupled plasma etching method. The SiC nanopillars with the cross section of rhombus, pentagon, and hexagonal have been obtained on β-SiC (001), misoriented α-SiC (11-20), and α-SiC (0001) on-axis substrates, respectively. It was found that crystal orientations and polytypes play key roles for the morphology of SiC nanopillars, which reflects the so-called Wulff's rule.

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Section: Resultsmentioning

confidence: 94%

“…The α-SiC substrates is a product grades of Tankeblue 4H and 6H-SiC (0001) substrates with on-axis [5]. The 6H-SiC (11-20) substrate was fabricated by using the conventional physical vapor transport method, already presented elsewhere [6]. For β-SiC substrate, the 3C-SiC layer was heteroepitaxially grown on Si (001) substrates [7].…”

Section: Methodsmentioning

confidence: 99%

Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars

Choi

Latu-Romain

Bano³

et al. 2013

MSF

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“…The α-SiC substrates used in this study were product grades of Tankeblue 4H and 6H-SiC (0001) on-axis substrates [9]. The 6H-SiC (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) substrates were grown by the conventional physical vapor transport method, which has been presented elsewhere [10]. For β-SiC (001) substrate, the 3C-SiC layers were heteroepitaxially grown on Si (001) substrates [11].…”

Section: Methodsmentioning

confidence: 99%

Comparative study on dry etching of α- and β-SiC nano-pillars

et al. 2012

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Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Xu,

Han,

et al. 2024

Cryst. Res. Technol.

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Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

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Two-inch a-plane (11-20) 6H-SiC Crystal Grown by Using the PVT Method from a Small Rectangular Substrate

Cited by 7 publications

References 0 publications

Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars

Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars

Comparative study on dry etching of α- and β-SiC nano-pillars

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

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