Comparative study on dry etching of α- and β-SiC nano-pillars

Choi, Jihoon; Latu-Romain, L.; Bano, Edwige; Henry, Anne; Lee, W J; Chevolleau, T.; Baron, T.

doi:10.1016/j.matlet.2012.07.051

Cited by 10 publications

(2 citation statements)

References 19 publications

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“…The surface morphology was comparable between these two concentrations. The etching rate was comparable to or higher than the other dry etching technique [5].…”

Section: Resultsmentioning

confidence: 68%

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

Yajima

Nakagomi

Habuka

et al. 2015

MSF

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“…The surface morphology was comparable between these two concentrations. The etching rate was comparable to or higher than the other dry etching technique [5].…”

Section: Resultsmentioning

confidence: 68%

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

Yajima

Nakagomi

Habuka

et al. 2015

MSF

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“…2 µm thick Ni as metal mask was deposited on the seed layer by pulse electroplating. 23 The RIE experiments were carried out in a parallel plate reactor system (RIE-200NL, Japan) in which the 13.56 MHz rf power was used. The base pressure was 5.6×10 −4 Pa.…”

Section: Methodsmentioning

confidence: 99%

Crystal structure induced residue formation on 4H-SiC by reactive ion etching

et al. 2016

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The (0001¯) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching parameters, such as work pressure, SF6:O2 ratio and etching time, on the residue formation were systematically investigated. The residue morphologies were observed by scanning electron microscopy and atomic force microscopy, respectively. The residues have spike shape and their facets are defined as {11¯02¯} crystal planes. They are formed at beginning of the etching and no new spikes are generated as prolonging etching time. Both work pressure and SF6:O2 ratio play significant role in the spike formation. The residues can be eliminated completely by increasing the SF6:O2 ratio and work pressure. On the basis of experimental results and of 4H-SiC crystal structure, the spike formation model is proposed.

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2015

Silicon Carbide One‐Dimensional Nanostructures

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Comparative study on dry etching of α- and β-SiC nano-pillars

Abstract: Different polytypes (α-SiC and β-SiC) and crystallographic orientations ( (0001)

Cited by 10 publications

References 19 publications

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

Crystal structure induced residue formation on 4H-SiC by reactive ion etching

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