Crystal structure induced residue formation on 4H-SiC by reactive ion etching

Liu, Yihong; Sun, Yan; Zhao, Gao-jie; Liao, Li-ming; Wang, Tao; Chen, Zhi-Zhan

doi:10.1063/1.4954749

Cited by 6 publications

(2 citation statements)

References 25 publications

(42 reference statements)

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“…High-energy dry etching methods, such as inductively coupled plasma etching, are commonly used for SiC micromachining. The application of these methods is limited because of the bombardment of high-energy ions, which can cause structural damage and affect subsequent device applications [13][14][15][16]. The chemical etching method is much gentler and simpler than the dry etching method.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical etching modes of 4H-SiC in KOH solutions

Yang

Zhao

Chen

et al. 2023

Semicond. Sci. Technol.

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Electrochemical etching is a promising wet etching technology for preparing porous structures and the flat surface etching of 4H-SiC. In this study, the effects of current density and KOH concentration on the etching of 4H-SiC were investigated. We found that the respective mechanisms for preparing porous structures and flat surface etching differed. The porous and flat etching modes were proposed to clarify the mechanistic differences. In addition, we achieved an etch rate of 1μm/h in flat etching mode, and the sample surface was improved for 4H-SiC applications in the field of optoelectronics and microelectronics through the thermal oxidation of SiC.

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Section: Introductionmentioning

confidence: 99%

Electrochemical etching modes of 4H-SiC in KOH solutions

Yang

Zhao

Chen

et al. 2023

Semicond. Sci. Technol.

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“…These nanoarrays were formed by RIE etching on 1 × 1 cm 2 samples, without masking, to allow samples to be mounted in the size-limited FE measurement system. The mechanism of forming such vertically-oriented large-scale SiC nanostructures was outlined by Liu et al [34]. Figure 1a depicts the RIE setup.…”

Section: Resultsmentioning

confidence: 99%

Stable Field Emission from Vertically Oriented SiC Nanoarrays

et al. 2021

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Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >107 mm−2 and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm−1 and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production.

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Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Michaels

Janavicius

et al. 2021

Adv Funct Materials

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Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for harsh environment power electronics, micro and nano electromechanical systems, and emerging quantum technology by serving as hosts for quantum states via defect centers. The chemical inertness of SiC limits viable etching techniques to plasma‐based reactive ion etching methods; however, these could have significant undesirable effects for electronic and photonic devices. This paper presents a plasma‐free, open‐circuit, photo‐induced metal‐assisted chemical etch for fabricating micro and nanoscale features without the inherent high energy ion‐related surface damage. The method presented herein utilizes above bandgap ultraviolet light, patterned noble metal (Pt), and a solution consisting of an oxidant potassium persulfate (K2S2O8) and an acid, hydrofluoric acid, to spatially define the etching morphology. The parameter space is comprehensively explored to demonstrate the controllability and versatility of this technique to produce ordered arrays of micro and nanoscale SiC structures with porous or solid sidewalls, and to elucidate the etching mechanism.

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Crystal structure induced residue formation on 4H-SiC by reactive ion etching

Cited by 6 publications

References 25 publications

Electrochemical etching modes of 4H-SiC in KOH solutions

Electrochemical etching modes of 4H-SiC in KOH solutions

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

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