Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devices

Abstract

In the gallium nitride (GaN) commercial applications such as high-power illumination and portable charging station, bipolar devices are highly demanded because of their superior power transfer capability. Also, in other scenarios of the monolithic integration where high electron mobility transistors (HEMTs) or superlattice-based devices are presented, the peripheral components are preferred to be lateral. However, to realize such a lateral bipolar junction in GaN, high-concentration p-type dopant doping is still challenging and hardly compatible with the HEMT integration. In this work, we proposed a novel strategy to form lateral bipolar GaN p–n junctions, enabled by the two-dimensional polarization doping. The theory and the simulation reveal this strategy features inspiring forwarding, blocking, and switching performance. Given the recent success of the GaN selective area regrowth techniques, the proposed lateral bipolar junction is highly promising in monolithic heterojunction integration in the future.

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

“…In the modern era of digitalization, field-effect transistor (FET) has emerged as a multi-functional device which has numerous applications in multifarious fields [1][2][3][4]. Different devices [5][6][7][8][9][10][11] and sensors [12,13] have been investigated (along with the fabrication techniques [14]) with the continuous progress in science and technology. Wang et al [12] has reported an useful regulator based on integrated voltage nanosensor.…”

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

“…Therefore, trap characterization is crucial for achieving better commercial applications of GaN-based HEMT devices, which can provide more insights into the performances of devices as well as more guidelines for the optimization of the device structure and manufacturing processes to improve both the capability and reliability of GaN HEMTs. In recent decades, several techniques such as low-frequency noise (LFN), frequency dispersion properties, and deep-level transient spectroscopy (DLTS) have been developed to characterize the locations, types, concentrations, energy levels, and capture cross-sections of traps in GaN HEMTs, which are also applicable to novel GaN HEMT structures [14] and GaN diodes [15], p-n junctions [16], etc.…”

Investigation of palladium gated polarity controllable FET as a highly sensitive and robust hydrogen gas sensor

“…3 Thus, timely detection of hydrogen gas is of critical importance so as to avoid any fire accident or health hazard. 3 In recent years, FET-based sensors [4][5][6][7][8] have attracted major interest in semiconductor industry for easy and efficient detection of gases. These solid-state gas sensors offer several benefits such as easy on-chip integration, robust behavior even at high temperatures, compatibility with current CMOS technology.…”