Two-dimensional group-III nitrides and devices: a critical review

Wang, Wenliang; Jiang, Hongsheng; Li, Linhao; Li, Guoqiang

doi:10.1088/1361-6633/ac11c4

Cited by 27 publications

(14 citation statements)

References 226 publications

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“…In addition, under the illumination of 20 mW/cm 2 , the long-term repetition of the on/off switch fully confirmed the light stability of the device (Figure l). In this way, just like 2D inorganic materials, the application potential of DJ HOIPs in the field of self-driven photodetection is worth looking forward to. − …”

Section: Resultsmentioning

confidence: 99%

Polar Bilayered Dion–Jacobson Hybrid Perovskite Single Crystal with Bulk Photovoltaic Effect for Self-Driven X-ray–Ultraviolet–Visible Photodetection

Fu,

Chen,

Chang

et al. 2023

Chem. Mater.

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Polar two-dimensional (2D) multilayered hybrid perovskites (HPs) have emerged as an outstanding class of selfdriven photodetection materials. However, the current market for self-driven photodetection is almost dominated by Ruddlesden− Popper (RP) HPs. Up to now, most of the Dion−Jacobson (DJ) HPs reported have crystallized in the centrosymmetric space group, so the photodetection based on this needs to be driven by external circuits, which not only increases the cost of the device but also limits the flexibility and photostability of the device. Therefore, constructing a broadband self-driven photodetection system that integrates sensing and energy supply in DJ HPs is the development trend of the future. Herein, we constructed two new polar DJ HPs (1,3-BMACH)(MA)Pb 2 I 7 and (1,3-BMACH)(FA)Pb 2 I 7 (1,3-BMACH is 1,3-bis(aminomethyl)cyclohexane, MA is methylammonium, FA is formamidinium) using cyclic diammonium as the spacer and MA, FA as perovskitizers, respectively. Due to the larger size of FA than MA, the elongation of Pb−I bond length results in (1,3-BMACH)(FA)Pb 2 I 7 (λ cutoff = 630 nm) having a narrower light absorption range than (1,3-BMACH)(MA)Pb 2 I 7 (λ cutoff = 650 nm). The devices based on (1,3-BMACH)(MA)Pb 2 I 7 single crystals can achieve high-efficiency broadband self-driven photodetection from the X-ray and ultraviolet to visible-light region. The self-driven detection for X-ray has a high sensitivity (199 μC Gy air −1 cm −2 ) and a low detection limit (106 nGy air s −1 ). Especially, the detectivity and responsivity of the device can reach 4.82 × 10 10 Jones and 0.58 mA/W under zero bias at 405 nm laser illumination. Meanwhile, (1,3-BMACH)(MA)Pb 2 I 7 and (1,3-BMACH)(FA)Pb 2 I 7 also exhibit reversible thermochromic transformation from light red to dark red.

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Section: Resultsmentioning

confidence: 99%

Polar Bilayered Dion–Jacobson Hybrid Perovskite Single Crystal with Bulk Photovoltaic Effect for Self-Driven X-ray–Ultraviolet–Visible Photodetection

Fu,

Chen,

Chang

et al. 2023

Chem. Mater.

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“…This has already resulted in a rapid increase in investigations of nitrides and other materials in their atomically‐thin forms akin to research in 2D material systems. [ 14–17 ] The low scattering and large surface to volume ratio of atomically‐thin materials make them potential candidates for electronics and optoelectronics applications. [ 18–20 ] Computational methods have predicted that the electronic properties of atomically thin (AT) GaN are superior to those of bulk GaN due to quantum confinement.…”

Section: Introductionmentioning

confidence: 99%

Atomically Thin Gallium Nitride for High‐Performance Photodetection

Jain

Syed

Balendhran

et al. 2023

Advanced Optical Materials

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Gallium nitride (GaN) technology has matured and commercialised for optoelectronic devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously, atomically thin materials with unique features have emerged as contenders for device miniaturization. However, the lack of successful techniques to produce ultra‐thin GaN prevents access to these new predicted properties. Here, this important gap is addressed by printing millimeter‐large ultra‐thin GaN nanosheets (NS) (≈1.4 nm) using a simple two‐step process that simultaneously introduces nitrogen point defects. This extends the photoelectrical spectral response from UV (280 nm) to near infrared (NIR) (1080 nm). The GaN‐based photodetectors display excellent figures of merit, having a responsivity (2.72 × 104 A W−1) up to four orders of magnitude higher than the commercial photodetectors at room temperature, despite being 102–103 times thinner. The photodetectors exhibit fast switching, with rise and decay time in the range of microseconds. The state‐of‐the‐art device performance originates from the ultra‐thin nature of GaN NS coupled with nitrogen point vacancies in the synthesis process. This work presents the opportunity to significantly expand the reach of GaN semiconductor technology and may lead to applications in high‐performance miniaturized imaging systems, spectroscopy, communication, and integrated optoelectronic circuits.

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“…Apart from the graphene-like hexagonal structure, other possible structures for 2D III-nitride monolayer have also been predicted, such as haeckelite GaN (T-GaN) [ 7 ], polyporous H-GaN [ 8 ] and planar allotropes of AlN [ 9 ]. More potential applications have been proposed for the 2D III-nitride monolayers [ 10 , 11 ]. On the other hand, there have been many attempts to experimentally synthesize 2D AlN, GaN or InN monolayers.…”

Section: Introductionmentioning

confidence: 99%

“…Decomposition and oxidation might be expected when removing the graphene covering layer. The reasons for the difficulty in preparating 2D III-nitride materials can be attributed to unsaturated dangling bonds on the surfaces of group III-nitrides, large lattice mismatch in heteroepitaxy and the low rate of lateral migration [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime

et al. 2023

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Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M2Si2N4 (M = Al, Ga and In) is predicted by choosing Si as the appropriate passivation element. The stability, electronic and optical properties of 2D M2Si2N4 materials are studied systematically based on first-principles calculations. The results show that Al2Si2N4 and Ga2Si2N4 are found to be indirect bandgap semiconductors, while In2Si2N4 is a direct bandgap semiconductor. Moreover, Al2Si2N4 and In2Si2N4 have good absorption ability in the visible light region, while Ga2Si2N4 is an ultraviolet-light-absorbing material. Furthermore, the carrier lifetimes of Ga2Si2N4 and In2Si2N4 are as large as 157.89 and 103.99 ns, respectively. All these desirable properties of M2Si2N4 materials make them attractive for applications in electronics and photoelectronics.

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Two-dimensional group-III nitrides and devices: a critical review

Cited by 27 publications

References 226 publications

Polar Bilayered Dion–Jacobson Hybrid Perovskite Single Crystal with Bulk Photovoltaic Effect for Self-Driven X-ray–Ultraviolet–Visible Photodetection

Polar Bilayered Dion–Jacobson Hybrid Perovskite Single Crystal with Bulk Photovoltaic Effect for Self-Driven X-ray–Ultraviolet–Visible Photodetection

Atomically Thin Gallium Nitride for High‐Performance Photodetection

Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime

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