Two-color quantum dot laser with tunable wavelength gap

Li, SG; Gong, Qian; Lao, Yan-Feng; Yang, Heng; Gao, Songxing; Chen, P; Zhang, YG; Feng, Shipeng; Hl, Wang

doi:10.1063/1.3278594

Cited by 26 publications

(15 citation statements)

References 14 publications

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“…4(b). This is possible in a highly inhomogeneous system due to change in carrier distribution among the Qdash stacks (caused by carrier spill-over) which affects the gain profile, and hence the emission spectra [21], [28].…”

Section: A Ridge-waveguide Lasersmentioning

confidence: 99%

Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters

Khan

Lee

et al. 2014

IEEE J. Quantum Electron.

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Section: A Ridge-waveguide Lasersmentioning

confidence: 99%

Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters

Khan

Lee

et al. 2014

IEEE J. Quantum Electron.

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“…Temperature has a great impact on carriers' distribution in QD, which leads the laser to exhibit a special lasing process. At room temperature, we simultaneously observed a two-color emission from a monolithic chip of the InAs/InP QD laser and demonstrated that the two peaks of the lasing emission with a tunable wavelength gap were not caused by the effect of the Rabi oscillation [11] . We further studied the lasing characteristics of the same QD laser at a low temperature.…”

mentioning

confidence: 82%

“…The special features from the QD laser are naturally expected from their unique quantum structure providing extreme confinement for carriers, which results in multiple colors emitting simultaneously from a monolithic chip. Recently, at room temperature, a two-color emission from a monolithic chip of InAs/InP QD laser was reported as a result of the increase of an injection current [10,11] . The operation temperature was found to have an important effect on the performance of the two-color QD laser.…”

mentioning

confidence: 99%

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Low-temperature characteristics of two-color InAs/InP quantum dots laser

Li¹,

Gong²,

Wang³

et al. 2012

中国光学快报

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We report on the lasing characteristics of a two-color InAs/InP quantum dots (QDs) laser at a low temperature. Two lasing peaks with a tunable gap are simultaneously observed. At a low temperature of 80 K, a tunable range greater than a 20-nm wavelength is demonstrated by varying the injection current from 30 to 500 mA. Under a special condition, we even observe three lasing peaks, which are in contrast to those observed at room temperature. The temperature coefficient of the lasing wavelength was obtained for the two colors in the 80−280 K temperature range, which is lower than that of the reference quantum well (QW) laser working in the same wavelength region.OCIS codes: 140.5960, 140.2020, 230.5590, 300.6360. doi: 10.3788/COL201210.041406. Self-organized quantum dot (QD) lasers have generated a huge amount of interest due to their δ-like quantum density of state and displayed unique optical and electrical properties that are different in character to those of the corresponding (QW) laser and bulk material laser [1] . In past years, good performances of QD lasers have been obtained in terms of a broad gain profile, low threshold current, high characteristic temperature, and high temperature wavelength stability [2−9] . The special features from the QD laser are naturally expected from their unique quantum structure providing extreme confinement for carriers, which results in multiple colors emitting simultaneously from a monolithic chip. Recently, at room temperature, a two-color emission from a monolithic chip of InAs/InP QD laser was reported as a result of the increase of an injection current [10,11] . The operation temperature was found to have an important effect on the performance of the two-color QD laser. At cryogenic temperatures, the QD lasers always display some special features different from those at room temperature. The obvious differences stem from the carriers' distribution in the non-uniform QD. At low temperatures, the carriers are always localized in the dots in which they are initially captured [12] . In the end, the laser performs some special characteristics as the injection current increases.In this letter, we carefully investigated the two-color features of an InAs/InP QD laser from a monolithic chip at a low temperature. Two peaks of lasing emission were observed simultaneously: The high energy peak underwent a continuous blue-shift with the increase of applied current while the low energy peak was somewhat fixed. A tunable range of greater than a 20-nm wavelength was obtained by adjusting the injection current from 30 to 500 mA. However, in the current range from 330 to 370 mA, we even obtained three-color lasing peaks simultaneously, which are in contrast to those observed at room temperature. At the same time, under a fixed injection current of 300 mA, the wavelength coefficients of 0.22 and 0.16 nm/K for the two colors in the temperature range of 80−280 K were obtained, which is better than that of 0.548 nm/K of the reference quantum well laser working in the same wavelength ...

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“…In QD-MLLs the lowest pulse widths are typically found at low injection currents just above laser threshold. The pulses tend to broaden when gain current is increased [43][44][45]. In order to ensure low pulse width and high average power, the presence of CW-ES emission proved to have a beneficial effect on the GS ML.…”

Section: Pulse Width Narrowing Due To Gs Splittingmentioning

confidence: 99%

Ultra‐Short‐Pulse QD Edge‐Emitting Lasers

Breuer

Syvridis

Рафаилов

2014

The Physics and Engineering of Compact Quantum Dot‐based Lasers for Biophotonics

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IntroductionHigh-power, electrically pumped edge-emitting monolithic semiconductor lasers based on InAs/GaAs quantum dots (QDs) offer significant advantages including ultra-short pulse generation due to ultrafast gain and absorption recovery [1, 2] and emission energies in the near-infrared spectral range [3]. Owing to their inherent inhomogeneous QD size distribution, a broadening of gain and absorption profile is realized, leading to broadband wavelengths emission. This inhomogeneous broadening together with ultrafast carrier dynamics is particularly advantageous for ultrafast applications including the generation, propagation, and amplification of subpicosecond optical pulses with high pulse peak power [4] and the generation of spectrally tunable emission [5,6]. The reduced density of states allows for the exploitation of QD materials in harnessing spectral versatility in novel dual-state emission. The spectral coverage of these QD lasers perfectly matches a wide range of relevant biophotonic applications including nonlinear excitation imaging techniques. The unique combination of efficient light generation, ultrafast carrier dynamics, and broadband gain bandwidth can deliver exclusive advantages in ultrafast microelectronic scale components, thereby stimulating major advances in ultrafast science and technology.In order to enable initial device design and optimization of novel pulse generating QD lasers and amplifiers, a new and efficient theoretical framework is presented as briefly introduced in Section 2.2. This framework takes into account specifically fundamental aspects associated with QD gain materials and allows for modeling of both continuous-wave (CW) emission and ultra-short pulse generation via passive mode-locking (PML) and subsequent amplification. The obtained understanding is applied to technologically realize and optimize QD laser and amplifier structures with particularly broad gain bandwidth enabling spectral versatility through broadband tunability of CW-emission generated in the visible wavelength range by second-harmonic-generation (SHG). This broad wavelength range is accessible only by the QD features as presented in Section 2.3. Novel functionalities based on the broad gain bandwidth and sophisticated QD laser design are explored inThe Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics, First Edition. Edited by Edik U. Rafailov.

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Two-color quantum dot laser with tunable wavelength gap

Cited by 26 publications

References 14 publications

Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters

Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters

Low-temperature characteristics of two-color InAs/InP quantum dots laser

Ultra‐Short‐Pulse QD Edge‐Emitting Lasers

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