Two color blinking of single strain-induced GaAs quantum dots

Abstract

Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots Appl.

Fluorescence Intermittency in Self-Assembled InP Quantum Dots

“…The former phenomenon, called as the spectral diffusion, is observed in CdSe [1][2][3][4] and InAlAs [5] QDs, where the PL peak energies from confined excitons and their LO sidebands fluctuate during the time of measurement. The latter phenomenon is referred to as the fluorescence intermittency or random telegraph signal, where the PL intensity switches between two or more discrete levels as the time goes by [1,[5][6][7][8][9]. The spectral diffusion and the fluorescence intermittency are tentatively attributed to photoionization or mobile photoactivated nonradiative recombination centers.…”

Carrier recombination dynamics inInxGa1−xN/GaNmultiple quantum wells

“…21 Recently, the non-exponential PL dynamics of ensembles of localized centers have been linked to the PL intermittency, also called blinking, of individual centers whose emission is observed under continuous excitation conditions. 23,24 Blinking is observed in a variety of systems such as colloidal and self-assembled quantum dots (QDs) 23,[25][26][27] and Si nanocristals, 24 and is attributed to the formation of metastable, charge-separated (CS) dark states.…”

Submicrosecond correlations in photoluminescence from InAs quantum dots

“…Many of these effects occur on millisecond timescales, including blinking, 2,3,4 two-color blinking, 5 and spectral diffusion. 6,7 Evidence suggests that millisecond blinking, seen only in a small minority of quantum dots, is caused by nearby defects.…”