2001
DOI: 10.1103/physrevlett.86.4883
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Fluorescence Intermittency in Self-Assembled InP Quantum Dots

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Cited by 73 publications
(64 citation statements)
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“…This phenomenon is referred to as fluorescence (photoluminescence) PL intermittency and blinking are observed frequently in single dye molecules 13,19 and single semiconductor quantum dots. 14,20,21 Several mechanisms have been proposed to explain these phenomena, 13,14,[19][20][21] because the time scale of the PL intermittency and on-off blinking phenomena depend on the system and experimental conditions. As a possible mechanism, the reorientation of a molecule (direction of the dipole moment) could cause the PL intensity fluctuation; however, the SWNTs with 100-300 nm length are fixed on the substrate surface by strong van der Waals interactions.…”
mentioning
confidence: 99%
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“…This phenomenon is referred to as fluorescence (photoluminescence) PL intermittency and blinking are observed frequently in single dye molecules 13,19 and single semiconductor quantum dots. 14,20,21 Several mechanisms have been proposed to explain these phenomena, 13,14,[19][20][21] because the time scale of the PL intermittency and on-off blinking phenomena depend on the system and experimental conditions. As a possible mechanism, the reorientation of a molecule (direction of the dipole moment) could cause the PL intensity fluctuation; however, the SWNTs with 100-300 nm length are fixed on the substrate surface by strong van der Waals interactions.…”
mentioning
confidence: 99%
“…This phenomenon is referred to as fluorescence (photoluminescence) intermittency, in which the PL intensity switches multiple levels as time passes. [19][20][21] Thermal heating by the excitation laser was ruled out as the origin of this PL intensity fluctuation, because we acquire the data at lower excitation power. Furthermore, if thermal heating caused the PL intensity fluctuation, the PL intensity fluctuation should be observed in all SWNTs.…”
mentioning
confidence: 99%
“…This phenomenon was explained in terms of an IR laser induced release of carriers, which were trapped into deep defects from the QD's. The considerable changes in the fluctuations of the I QD during the time interval of the measurement were detected, when the sample was illuminated with an additional near-IR laser irradiation [24]. Carriers trapped at deep localized centers in the vicinity of the QDs were suggested to be responsible for the observed phenomenon [24].…”
Section: Introductionmentioning
confidence: 94%
“…To the best of our knowledge, there are very few earlier publications [23,24] devoted to studies of IR laser induced changes in I QD . In contrast to our findings, it was found [23] that the IR laser induces an increase of the PL from the QD's by up to 40%.…”
Section: Introductionmentioning
confidence: 99%
“…All these expectations make QDs very attractive and promising candidates for electro-optic devices. Motivated by these expectations, several research groups have extensively studied the optical properties of QDs, and various kinds of important and interesting findings have been successfully reported, 1,2 such as many carrier effects in external fields, [3][4][5][6] strong optical anisotropy, 7-10 fluorescence intermittency, [11][12][13] and Rabi oscillations. [14][15][16][17][18][19] In these investigations, the observation of single QDs is a key: single dot spectroscopy is one of the most promising techniques to reveal the nature of QDs hidden behind the ensemble because exciton parameters can be directly obtained.…”
Section: Introductionmentioning
confidence: 99%