Single-photon sources have recently been demonstrated using a variety of devices, including molecules, mesoscopic quantum wells, colour centres, trapped ions and semiconductor quantum dots. Compared with a Poisson-distributed source of the same intensity, these sources rarely emit two or more photons in the same pulse. Numerous applications for single-photon sources have been proposed in the field of quantum information, but most--including linear-optical quantum computation--also require consecutive photons to have identical wave packets. For a source based on a single quantum emitter, the emitter must therefore be excited in a rapid or deterministic way, and interact little with its surrounding environment. Here we test the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity through a Hong-Ou-Mandel-type two-photon interference experiment. We find that consecutive photons are largely indistinguishable, with a mean wave-packet overlap as large as 0.81, making this source useful in a variety of experiments in quantum optics and quantum information.

We observe large spontaneous emission rate modification of individual InAs Quantum Dots (QDs) in 2D a photonic crystal with a modified, high-Q single defect cavity. Compared to QDs in bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase by up to a factor of 8. In contrast, off-resonant QDs indicate up to five-fold rate quenching as the local density of optical states (LDOS) is diminished in the photonic crystal. In both cases we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using Finite Difference Time Domain (FDTD) simulations and find good agreement with experiment.One of the core issues of modern optics is the subject of photon interaction with matter. In the Wigner-Weisskopf approximation, the emission rate is directly proportional to the LDOS [1]. Over the past decade, photonic resonators with increased LDOS have been exploited to enhance emission rate for improving numerous quantum optical devices (e.g., [2,3]). Single photon sources in particular promise to see large improvements [4]. While more attention has been given to increasing emission rate, the reverse is also possible in an environment with decreased LDOS.Here we demonstrate that by designing a photonic crystal structure with a modified single-defect cavity, we can significantly increase or decrease the spontaneous emission (SE) rate of embedded QDs. Photonic crystals (PCs), periodic arrays of alternating refractive index, are near-ideal testbeds for such experiments. Their electromagnetic band structure modifies the LDOS relative to free space and hence the SE rate of embedded QD emitters. We demonstrate that SE of cavity-coupled QDs is enhanced up to 8 times compared to QDs in bulk GaAs. This coupling paves the way to single photon sources with higher out-coupling efficiency and visibility. On the other hand, decoupled QDs emit at up to five-fold decreased rate compared to bulk. This lifetime enhancement is significantly higher than

No abstract