Tunneling processes between Landau levels and quantum-wire states

Smoliner, J.; Demmerle, W.; Hirler, F.; Gornik, E.; Weimann, G.; Hauser, M.; Schlapp, W.

doi:10.1103/physrevb.43.7358

Cited by 14 publications

(6 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5 Modification of one of the 2D layers into a superlattice of one-dimensional (1D) quantum wires has been employed to measure vertical tunneling between 1D and 2D electron systems. 6 Constraints on tunneling imposed by the requirement of simultaneous conservation of energy and momentum can be tuned by the transport voltage and external magnetic fields. In certain situations, 7 this makes it possible to observe features of the momentum-resolved single-electron spectral function directly in tunneling transport.…”

Section: Introductionmentioning

confidence: 99%

Mesoscopic effects in tunneling between parallel quantum wires

et al. 2001

View full text Add to dashboard Cite

We consider a phase-coherent system of two parallel quantum wires that are coupled via a tunneling barrier of finite length. The usual perturbative treatment of tunneling fails in this case, even in the diffusive limit, once the length L of the coupling region exceeds a characteristic length scale Lt set by tunneling. Exact solution of the scattering problem posed by the extended tunneling barrier allows us to compute tunneling conductances as a function of applied voltage and magnetic field. We take into account charging effects in the quantum wires due to applied voltages and find that these are important for one-dimensional-to-one-dimensional tunneling transport. PACS number(s): 73.63. Nm, 73.40.Gk

show abstract

Section: Introductionmentioning

confidence: 99%

Mesoscopic effects in tunneling between parallel quantum wires

et al. 2001

View full text Add to dashboard Cite

show abstract

“…11) The matrix element M i!f can be written in terms of the current density operator 12) based on the effective mass approximation such that…”

Section: Resultsmentioning

confidence: 99%

Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultrathin Silicon-on-Insulator Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistors

Ōmura

2007

jjap

View full text Add to dashboard Cite

In this paper, the low-temperature behavior of reverse-biased lateral, unidirectional, bipolar-type insulated-gate transistors (lubistors) fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. Steplike current dependence on reverse bias is observed even at room temperature as well as at low temperatures, which suggests distinct quantum transport in the thin silicon layer. It is demonstrated that the effective activation energies of generation-recombination centers are shallower than simply expected, which has been examined on the basis of theoretical calculations. The quantum confinement effect on the generation-recombination process is strongly illustrated under the reverse-biased conditions.

show abstract

“…19) The matrix element M i→f can be written in terms of the current density operator 20) based on the effective mass approximation such that…”

Section: Theoretical Formulations Of Tunneling Current and Discussionmentioning

confidence: 99%

Narrowband optical filter based on a Fabry–Perot interferometer with two waveguide–grating mirrors

2007

View full text Add to dashboard Cite

In this paper, the multi-negative conductance property detected at low temperatures in a silicon-on-insulator insulated-gate pn-junction device with a 10-nm-thick silicon layer is described. Important aspects of lateral low-dimensional tunneling process are examined by a theoretical formulation. A comparison of the characteristics of devices with a 10-nm-thick or a 90-nm-thick silicon layer indicates that the strong two-dimensional confinement effect plays an important role in multi-negative conductance. The theory predicts that a "resonance effect" between two subband levels results in the multi-negative conductance in the device with the 10-nm-thick silicon layer.

show abstract

Tunneling processes between Landau levels and quantum-wire states

Cited by 14 publications

References 14 publications

Mesoscopic effects in tunneling between parallel quantum wires

Mesoscopic effects in tunneling between parallel quantum wires

Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultrathin Silicon-on-Insulator Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistors

Narrowband optical filter based on a Fabry–Perot interferometer with two waveguide–grating mirrors

Contact Info

Product

Resources

About