Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultrathin Silicon-on-Insulator Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistors

Abstract

In this paper, the low-temperature behavior of reverse-biased lateral, unidirectional, bipolar-type insulated-gate transistors (lubistors) fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. Steplike current dependence on reverse bias is observed even at room temperature as well as at low temperatures, which suggests distinct quantum transport in the thin silicon layer. It is demonstrated that the effective activation energies of generation-recombination centers are shallower than simply expected, which has been examined on the basis of theoretical calculations. The quantum confinement effect on the generation-recombination process is strongly illustrated under the reverse-biased conditions.

Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

“…In order to curb the rapidly increasing power consumption in conventional CMOS circuits, 5,6) the tunneling field-effect transistors (TFET) has been proposed as an alternative switching device. The TFET device is a gated p-i-n diode which exploits the gate-controlled band-to-band tunneling 7,8) mechanism to overcome the fundamental kT=q thermodynamic limit placed on the abruptness of the subthreshold swing S in conventional MOSFETs. 9) In addition, excellent short channel effects (SCE) and extremely low off-state leakage I off are achieved in TFET by virtue of its reverse-biased p-i-n diode configuration.…”