We present a novel approach to develop and process a microelectrode integrated in a standard AFM tip. The presented fabrication process allows the integration of an electroactive area at an exactly defined distance above of the end of a scanning probe tip and the subsequent remodeling and sharpening of the original AFM tip using a focused ion beam (FIB) technique (See ref 1 for patent information). Thus, the functionality of scanning electrochemical microscopy (SECM) can be integrated into any standard atomic force microscope (AFM). With the demonstrated approach, a precisely defined and constant distance between the microelectrode and the sample surface can be obtained, alternatively to the indirect determination of this distance usually applied in SECM experiments. Hence, a complete separation of the topographical information and the electrochemical signal is possible. The presented technique is a significant step toward electrochemical imaging with submicrometer electrodes as demonstrated by the development of the first integrated frame submicroelectrode.
A scanning microwave microscope (SMM) for spatially resolved capacitance measurements in the attofarad-to-femtofarad regime is presented. The system is based on the combination of an atomic force microscope (AFM) and a performance network analyzer (PNA). For the determination of absolute capacitance values from PNA reflection amplitudes, a calibration sample of conductive gold pads of various sizes on a SiO(2) staircase structure was used. The thickness of the dielectric SiO(2) staircase ranged from 10 to 200 nm. The quantitative capacitance values determined from the PNA reflection amplitude were compared to control measurements using an external capacitance bridge. Depending on the area of the gold top electrode and the SiO(2) step height, the corresponding capacitance values, as measured with the SMM, ranged from 0.1 to 22 fF at a noise level of ~2 aF and a relative accuracy of 20%. The sample capacitance could be modeled to a good degree as idealized parallel plates with the SiO(2) dielectric sandwiched in between. The cantilever/sample stray capacitance was measured by lifting the tip away from the surface. By bringing the AFM tip into direct contact with the SiO(2) staircase structure, the electrical footprint of the tip was determined, resulting in an effective tip radius of ~60 nm and a tip-sample capacitance of ~20 aF at the smallest dielectric thickness.
The scanning microwave microscope is used for calibrated capacitance spectroscopy and spatially resolved dopant profiling measurements. It consists of an atomic force microscope combined with a vector network analyzer operating between 1–20 GHz. On silicon semiconductor calibration samples with doping concentrations ranging from 1015 to 1020 atoms/cm3, calibrated capacitance-voltage curves as well as derivative dC/dV curves were acquired. The change of the capacitance and the dC/dV signal is directly related to the dopant concentration allowing for quantitative dopant profiling. The method was tested on various samples with known dopant concentration and the resolution of dopant profiling determined to 20% while the absolute accuracy is within an order of magnitude. Using a modeling approach the dopant profiling calibration curves were analyzed with respect to varying tip diameter and oxide thickness allowing for improvements of the calibration accuracy. Bipolar samples were investigated and nano-scale defect structures and p-n junction interfaces imaged showing potential applications for the study of semiconductor device performance and failure analysis.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.