The oligomeric lipid raft-associated integral protein stomatin normally localizes to the plasma membrane and the late endosomal compartment. Similar to the caveolins, it is targeted to lipid bodies (LBs) on overexpression. Endogenous stomatin also associates with LBs to a small extent. Green fluorescent protein-tagged stomatin (StomGFP) and the dominant-negative caveolin-3 mutant DGV (

There has been emerging interest whether plasma membrane constituents are moving according to free Brownian motion or hop diffusion. In the latter model, lipids, lipid-anchored proteins, and transmembrane proteins would be transiently confined to periodic corrals in the cell membrane, which are structured by the underlying membrane skeleton. Because this model is based exclusively on results provided by one experimental strategy--high-resolution single particle tracking--we attempted in this study to confirm or amend it using a complementary technique. We developed a novel strategy that employs single molecule fluorescence microscopy to detect confinements to free diffusion of CD59--a GPI-anchored protein--in the plasma membrane of living T24 (ECV) cells. With this method, minimum invasive labeling via fluorescent Fab fragments was sufficient to measure the lateral motion of individual protein molecules on a millisecond timescale, yielding a positional accuracy down to 22 nm. Although no hop diffusion was directly observable, based on a full analytical description our results provide upper boundaries for confinement size and strength.

A scanning microwave microscope (SMM) for spatially resolved capacitance measurements in the attofarad-to-femtofarad regime is presented. The system is based on the combination of an atomic force microscope (AFM) and a performance network analyzer (PNA). For the determination of absolute capacitance values from PNA reflection amplitudes, a calibration sample of conductive gold pads of various sizes on a SiO(2) staircase structure was used. The thickness of the dielectric SiO(2) staircase ranged from 10 to 200 nm. The quantitative capacitance values determined from the PNA reflection amplitude were compared to control measurements using an external capacitance bridge. Depending on the area of the gold top electrode and the SiO(2) step height, the corresponding capacitance values, as measured with the SMM, ranged from 0.1 to 22 fF at a noise level of ~2 aF and a relative accuracy of 20%. The sample capacitance could be modeled to a good degree as idealized parallel plates with the SiO(2) dielectric sandwiched in between. The cantilever/sample stray capacitance was measured by lifting the tip away from the surface. By bringing the AFM tip into direct contact with the SiO(2) staircase structure, the electrical footprint of the tip was determined, resulting in an effective tip radius of ~60 nm and a tip-sample capacitance of ~20 aF at the smallest dielectric thickness.

Here we present a method for the stoichiometric analysis of molecular aggregates in the cellular plasma membrane, based on single molecule fluorescence microscopy. We use selective photobleaching to erase all active fluorophores within a small region of the membrane, while conserving the stoichiometry of labeling in the remaining part of the membrane. At the onset of repopulation due to Brownian motion, single diffraction limited spots of individual aggregates can be resolved and quantified. We demonstrate the proof of principle of this method by quantifying the dye load of fluorescently labeled immunoglobulins diffusing in a supported lipid bilayer.

The scanning microwave microscope is used for calibrated capacitance spectroscopy and spatially resolved dopant profiling measurements. It consists of an atomic force microscope combined with a vector network analyzer operating between 1–20 GHz. On silicon semiconductor calibration samples with doping concentrations ranging from 1015 to 1020 atoms/cm3, calibrated capacitance-voltage curves as well as derivative dC/dV curves were acquired. The change of the capacitance and the dC/dV signal is directly related to the dopant concentration allowing for quantitative dopant profiling. The method was tested on various samples with known dopant concentration and the resolution of dopant profiling determined to 20% while the absolute accuracy is within an order of magnitude. Using a modeling approach the dopant profiling calibration curves were analyzed with respect to varying tip diameter and oxide thickness allowing for improvements of the calibration accuracy. Bipolar samples were investigated and nano-scale defect structures and p-n junction interfaces imaged showing potential applications for the study of semiconductor device performance and failure analysis.