Tunneling oxide engineering by ion implantation of nitrogen for 3D vertical silicon pillar SONOS flash memory

Oh, Jin Kyung; Yang, Seong-Dong; Lee, Sang-Youl; Kim, Young-Su; Kang, Min-Ho; Lim, Sung Kyu; Lee, Hi‐Deok; Lee, Ga‐Won

doi:10.1016/j.mee.2012.08.005

Cited by 6 publications

(1 citation statement)

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“…It is well known that SONOS has fundamental limitations, such as slow erase speed and poor data retention characteristics at the tunneling oxide thickness of less than 2 nm. In order to solve these problems, modulated tunneling oxide schemes are integrated with the SONOS structure, such as N 2 ion implantation (N 2 I/I) [6], and the bandgap-engineering (BE) method [7]. In addition, flicker noise analysis is carried out, to compare each device characteristics, in particular, the interface properties.…”

Section: Introductionmentioning

confidence: 99%

Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cells with Modulated Tunneling Oxide

Lee¹,

Seung-Dong²,

Yun³

et al. 2013

Transactions on Electrical and Electronic Materials

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In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of N 2 ion implantation (N 2 I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage (V T ) of 0.13 V, and a higher g m.max of 18.6 μA/V and mobility of 27.02 cm 2 /Vs than the conventional and N 2 I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and N 2 I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

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Section: Introductionmentioning

confidence: 99%