Tunneling effect on double potential barriers GaAs and PbS

Prastowo, Sri Handono Budi; Supriadi, Bambang; Ridlo, Zainur Rasyid; Prihandono, Trapsilo

doi:10.1088/1742-6596/1008/1/012012

Cited by 2 publications

(3 citation statements)

References 5 publications

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“…Applying boundary conditions in the area and , at matrix equation can be written (12) This equation can be reduced to (13) are a two × two matrices describing the wave propagation at the ladder potential , with the value ie (14) Second part: calculate the propagation matrix for the propagation of the wave function between two ladder potentials. The propagation in question is between and .…”

Section: Matrix Propagation Methodsmentioning

confidence: 99%

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Tunnelling Effect for Quadruples Potential Using Matrix Propagation Method

Nasiroh

Supriadi

Handayani

2020

Indones. Rev. Phys.

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Semiconductor materials can be used as potential barriers to Tunnelling effects. In this study, four semiconductor materials are arranged in various ways to form a quadruple potential structure to analyze the value of the transmission coefficient. The analysis was conducted using the analytical and numerical matrix propagation method using Matlab2018a. The results confirmed that the inverted arrangement produces the same transmission coefficient value for each energy. So that there are 12 kinds of transmission coefficient values generated from 24 arrangements. The semiconductor material composition with the most considerable transmission coefficient value is ADCB and BCDA, which have a value of 0.8087. The variation of the arrangement affects the value of the transmission coefficient so that it can be used as a guideline for selecting the arrangement that produces the most optimum value of the transmission coefficient from various possible arrangements.

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Section: Matrix Propagation Methodsmentioning

confidence: 99%

“…GaAs is typically used for laser diodes and high-speed transistors. GaAs has an energy bandgap structure with a direct transition (direct bandgap) of 1.424 eV with a width of 0.565 nm [14].…”

Section: Semiconductors As Potential Barriersmentioning

confidence: 99%

Tunnelling Effect for Quadruples Potential Using Matrix Propagation Method

Nasiroh

Supriadi

Handayani

2020

Indones. Rev. Phys.

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“…We calculated E F of the three samples from their carrier density, which were obtained from Hall effect measurement (as shown in Table S3). Herein, the effective mass of bulk ZnO (m e ≈ 0.24 m 0 ) and PbS (m h ≈ 0.075 m 0 ) were used for calculation (Brus, 1984;Prastowo et al, 2018). It can be seen that the E F of ZnO@SnO 2 NWs (−4.38 eV) is a little higher than that of ZnO NWs (−4.46 eV), which is mainly due to the larger carrier density of ZnO@SnO 2 NWs.…”

Section: Energy Band Structure Of Zno@sno 2 Nwsmentioning

confidence: 99%

Improving Photovoltaic Performance of ZnO Nanowires Based Colloidal Quantum Dot Solar Cells via SnO2 Passivation Strategy

et al. 2019

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Colloidal quantum dot solar cells (CQDSCs) based on one-dimensional metal oxide nanowires (NWs) as the electron transport layer (ETL) have attracted much attention due to their larger ETL/colloidal quantum dots (CQDs) contact area and longer electron transport length than other structure CQDSCs, such as planar CQDSCs. However, it is known that defect states in NWs would increase the recombination rate because of the high surface area of NWs. Here, the defect species on the ZnO NWs' surface which resulted in the surface recombination and SnO 2 passivation effects were investigated. Comparing with the solar cells using pristine ZnO NWs, the CQDSCs based on SnO 2 passivated ZnO NW electrodes exhibited a beneficial band alignment to charge separation, and the interfacial recombination at the ZnO/CQD interface was reduced, eventually resulting in a 40% improvement of power conversion efficiency (PCE). Overall, these findings indicate that surface passivation and the reduction of deep level defects in ETLs could contribute to improving the PCE of CQDSCs.

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Tunneling effect on double potential barriers GaAs and PbS

Cited by 2 publications

References 5 publications

Tunnelling Effect for Quadruples Potential Using Matrix Propagation Method

Tunnelling Effect for Quadruples Potential Using Matrix Propagation Method

Improving Photovoltaic Performance of ZnO Nanowires Based Colloidal Quantum Dot Solar Cells via SnO2 Passivation Strategy

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